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PESD24VS2UAT,215

Description
tvs diode arrays 24v dual esd protect
CategoryDiscrete semiconductor    diode   
File Size136KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PESD24VS2UAT,215 Overview

tvs diode arrays 24v dual esd protect

PESD24VS2UAT,215 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-236
package instructionR-PDSO-G3
Contacts3
Manufacturer packaging codeSOT23
Reach Compliance Codecompli
ECCN codeEAR99
Maximum breakdown voltage27.5 V
Minimum breakdown voltage26.5 V
Breakdown voltage nominal value27 V
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation160 W
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage24 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
DISCRETE SEMICONDUCTORS
DATA SHEET
PESDxS2UAT series
Double ESD protection diodes
in SOT23 package
Product data sheet
2004 Feb 18

PESD24VS2UAT,215 Related Products

PESD24VS2UAT,215 PESD5V0S2UAT,215 PESD15VS2UAT,215 PESD3V3S2UAT,215
Description tvs diode arrays 24v dual esd protect tvs diode arrays 5V dual esd protect tvs diode arrays 15v dual esd protect tvs diode arrays 3.3V dual esd protct
Brand Name NXP Semiconduc NXP Semiconduc NXP Semiconduc NXP Semiconduc
Is it Rohs certified? conform to conform to conform to conform to
Parts packaging code TO-236 TO-236 TO-236 TO-236
package instruction R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Contacts 3 3 3 3
Manufacturer packaging code SOT23 SOT23 SOT23 SOT23
Reach Compliance Code compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum breakdown voltage 27.5 V 7.2 V 18.4 V 6 V
Minimum breakdown voltage 26.5 V 6.4 V 17.6 V 5.2 V
Breakdown voltage nominal value 27 V 6.8 V 18 V 5.6 V
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code TO-236AB TO-236AB TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1
Maximum non-repetitive peak reverse power dissipation 160 W 260 W 160 W 330 W
Number of components 2 2 2 2
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260
polarity UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 24 V 5 V 15 V 3.3 V
surface mount YES YES YES YES
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 40 40
Maker NXP NXP NXP -
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