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BD439S

Description
transistors bipolar - bjt npn trans TO-126
CategoryDiscrete semiconductor    The transistor   
File Size41KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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BD439S Overview

transistors bipolar - bjt npn trans TO-126

BD439S Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-126
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Manufacturer packaging codeTO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD)
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)4 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)36 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
BD439/441
BD439/441
Medium Power Linear and Switching
Applications
• Complement to BD440, BD442 respectively
1
TO-126
2.Collector
3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: BD439
: BD441
V
CES
Collector-Emitter Voltage
: BD439
: BD441
Collector-Emitter Voltage
: BD439
: BD441
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
1. Emitter
Value
60
80
60
80
60
80
5
4
7
1
36
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
°C
°C
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BD439
: BD441
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
: BD439
: BD441
: BD439
: BD441
: BD439
: BD441
: BD439
: BD441
: BD439
: BD441
Test Condition
I
C
= 100mA, I
B
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 60V, V
BE
= 0
V
CE
= 80V, V
BE
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
V
CE
=1V, I
C
= 500mA
V
CE
= 1V, I
C
= 2A
I
C
= 2A, I
B
= 0.2A
V
CE
= 5V, I
C
= 10mA
V
CE
= 1V, I
C
= 2A
V
CE
= 1V, I
C
= 250mA
3
0.58
1.5
20
15
40
40
25
15
130
130
140
140
Min.
60
80
100
100
100
100
1
Typ.
Max.
Units
V
V
µA
µA
µA
µA
mA
I
CBO
I
CES
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Current Gain Bandwidth Product
0.8
V
V
V
MHz
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001

BD439S Related Products

BD439S BD441STU
Description transistors bipolar - bjt npn trans TO-126 transistor npn 80v 4A TO-126
Brand Name Fairchild Semiconduc Fairchild Semiconductor
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker Fairchild Fairchild
Parts packaging code TO-126 TO-126
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Manufacturer packaging code TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD) TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD)
Reach Compliance Code compli compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 4 A 4 A
Collector-emitter maximum voltage 60 V 80 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 25 15
JEDEC-95 code TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 36 W 36 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 3 MHz 3 MHz
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