PMEG3020CPA
2 A low V
F
dual MEGA Schottky barrier rectifier
Rev. 1 — 24 August 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in
common cathode configuration with an integrated guard ring for stress protection,
encapsulated in a SOT1061 leadless small Surface-Mounted Device (SMD) plastic
package with medium power capability.
1.2 Features and benefits
Average forward current: I
F(AV)
≤
2 A
Reverse voltage: V
R
≤
30 V
Low forward voltage
Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
AEC-Q101 qualified
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Low power consumption applications
Battery chargers for mobile equipment
1.4 Quick reference data
Table 1.
Quick reference data
T
j
= 25
°
C unless otherwise specified.
Symbol
Per diode
I
F(AV)
average forward
current
square wave;
δ
= 0.5; f = 20 kHz
T
amb
≤
75
°C
T
sp
≤
135
°C
V
R
V
F
I
R
[1]
[1]
Parameter
Conditions
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
410
485
2
2
30
440
2000
A
A
V
mV
μA
reverse voltage
forward voltage
reverse current
I
F
= 2 A
V
R
= 30 V
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
NXP Semiconductors
PMEG3020CPA
2 A low V
F
dual MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
anode diode 1
anode diode 2
common cathode
3
3
Simplified outline
Graphic symbol
1
2
1
2
006aaa438
Transparent top view
3. Ordering information
Table 3.
Ordering information
Package
Name
Description
Version
Type number
PMEG3020CPA HUSON3 plastic thermal enhanced ultra thin small outline package; SOT1061
no leads; three terminals; body 2
×
2
×
0.65 mm
4. Marking
Table 4.
Marking codes
Marking code
AM
Type number
PMEG3020CPA
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
R
I
F(AV)
reverse voltage
average forward
current
T
j
≤
25
°C
square wave;
δ
= 0.5; f = 20 kHz
T
amb
≤
75
°C
T
sp
≤
135
°C
I
FRM
I
FSM
repetitive peak
forward current
non-repetitive peak
forward current
t
p
≤
1 ms;
δ ≤
0.25
square wave;
t
p
= 8 ms
[2]
[1]
Parameter
Conditions
Min
-
Max
30
Unit
V
-
-
-
-
2
2
7
9
A
A
A
A
PMEG3020CPA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 24 August 2010
2 of 15
NXP Semiconductors
PMEG3020CPA
2 A low V
F
dual MEGA Schottky barrier rectifier
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
Parameter
total power dissipation
Conditions
T
amb
≤
25
°C
[3][4]
[3][5]
[1][3]
Min
-
-
-
-
−55
−65
Max
500
960
1800
150
+150
+150
Unit
mW
mW
mW
°C
°C
°C
Per device, one diode loaded
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
junction temperature
ambient temperature
storage temperature
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
T
j
= 25
°C
prior to surge.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1][2]
[3]
[4]
[5]
Min
Typ
Max
Unit
Per device, one diode loaded
-
-
-
-
-
-
-
-
250
130
70
12
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
[5]
[6]
thermal resistance from
junction to solder point
[6]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of cathode tab.
PMEG3020CPA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 24 August 2010
3 of 15
NXP Semiconductors
PMEG3020CPA
2 A low V
F
dual MEGA Schottky barrier rectifier
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.5
0.25
0.1
0.05
10
0.02
0
1
10
−3
0.01
0.33
0.2
0.75
006aac415
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 1.
10
3
Z
th(j-a)
(K/W)
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac416
duty cycle =
10
2
1
0.75
0.5
0.33
0.25
0.1
10
0.2
0.05
0
1
10
−3
0.02
0.01
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for cathode 1 cm
2
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG3020CPA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 24 August 2010
4 of 15
NXP Semiconductors
PMEG3020CPA
2 A low V
F
dual MEGA Schottky barrier rectifier
10
2
duty cycle =
1
Z
th(j-a)
(K/W)
0.75
0.5
0.33
0.25
10
0.1
0.05
0.2
006aac417
0
0.02
0.01
1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
F
forward voltage
I
F
= 100 mA
I
F
= 1 A
I
F
= 2 A
I
R
C
d
reverse current
diode capacitance
V
R
= 10 V
V
R
= 30 V
f = 1 MHz
V
R
= 1 V
V
R
= 10 V
t
rr
[1]
Parameter
Conditions
Min
-
-
-
-
-
-
-
[1]
Typ
220
335
410
120
485
170
60
50
Max
-
370
440
-
2000
-
-
-
Unit
mV
mV
mV
μA
μA
pF
pF
ns
reverse recovery time
-
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
PMEG3020CPA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 24 August 2010
5 of 15
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