NDS8926L99Z datasheet, PDF - EEWORLD Datasheet

NDS8926L99Z: DescriptionPower Field-Effect Transistor, 5.5A I(D), 20V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8; CategoryDiscrete semiconductor The transistor; File Size115KB，6 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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NDS8926L99Z Overview

Power Field-Effect Transistor, 5.5A I(D), 20V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

Parameter Name	Attribute value
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	5.5 A
Maximum drain-source on-resistance	0.035 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	20 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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