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VS-4EGH06-M3/5BT

Description
rectifiers 4 amp 600 volts hyperfast - low qrr
Categorysemiconductor    Discrete semiconductor   
File Size133KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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VS-4EGH06-M3/5BT Overview

rectifiers 4 amp 600 volts hyperfast - low qrr

VS-4EGH06-M3/5BT Parametric

Parameter NameAttribute value
ManufactureVishay
Product CategoryRectifiers
RoHSYes
ProducUltra Fast Recovery Rectifiers
ConfiguratiSingle
Reverse Voltage600 V
Forward Voltage D1.95 V
Recovery Time30 ns
Forward Continuous Curre4 A
Max Surge Curre55 A
Reverse Current IR3 uA
Mounting StyleSMD/SMT
Package / CaseDO-214AA
PackagingReel
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
Factory Pack Quantity3200
VS-4EGH06-M3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 4 A FRED Pt
®
FEATURES
• Hyperfast recovery time, reduced Q
rr
and soft
recovery
• 175 °C maximum
temperature
operating
junction
• For PFC CRM/CCM, snubber operation
Cathode
Anode
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMB
(DO-214AA)
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Package
Circuit configuration
4A
600 V
1.2 V
30 ns
175 °C
SMB (DO-214AA)
Single
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
Note
(1)
Mounted on PCB with minimum pad size
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
L
= 76 °C
T
J
= 25 °C
(1)
TEST CONDITIONS
VALUES
600
4
55
-55 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
TEST CONDITIONS
I
R
= 100 μA
I
F
= 4 A
I
F
= 4 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
MIN.
600
-
-
-
-
-
TYP.
-
1.6
1.2
-
-
5.7
MAX.
-
1.95
1.4
3
100
-
μA
pF
V
UNITS
Revision: 07-Sep-17
Document Number: 94775
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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