VBE 17-12NO7
ECO-PAC
TM
Single Phase Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
I
dAV
= 19 A
V
RRM
= 1200 V
t
rr
= 40 ns
V
RSM
V
1200
V
RRM
V
1200
Typ
A
N
D
VBE 17-12NO7
K
Symbol
I
dAV
x
I
dAVM
I
FSM
Conditions
T
C
= 85°C, module
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
19
90
40
45
35
40
10
10
5
5
-40...+150
150
-40...+125
A
A
A
A
A
A
As
A
2
s
A
2
s
A
2
s
°C
°C
°C
V~
V~
2
Features
• Package with DCB ceramic
base plate in low profile
• Isolation voltage 3000 V~
• Planar passivated chips
• Low forward voltage drop
• Leads suitable for PC board soldering
Applications
• Supplies for DC power equipment
• Input and output rectifiers for high
frequency
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Space and weight savings
• Improved temperature and power
cycling capability
• Small and light weight
• Low noise switching
Dimensions in mm (1 mm = 0.0394")
It
2
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
Symbol
I
R
V
F
V
T0
r
T
R
thJC
R
thCH
I
RM
t
rr
a
d
S
d
A
50/60 Hz, RMS
I
ISOL
£
1 mA
t = 1 min
t=1s
3000
3600
Mounting torque (M4)
typ.
Conditions
V
R
= V
RRM
V
R
= V
RRM
I
F
= 10 A
T
VJ
= 25°C
T
VJ
= T
VJM
T
VJ
= 25°C
1.5-2/14-18
Nm/lb.in.
19
g
Characteristic Values
typ.
max.
0.06
0.25
2.92
mA
mA
V
for power-loss calculations only
per diode; DC current
per diode, DC current, typ.
I
F
= 12 A, -diF/dt = 100 A/µs
V
R
= 100 V, L = 0.05 mH, T
VJ
= 100°C
I
F
= 1 A; -di/dt = 50 A/µs; V
R
= 30 V, T
VJ
= 25°C
Max. allowable acceleration
creeping distance on surface
creepage distance in air
4
40
1.32
V
30 mW
2.5 K/W
0.3 K/W
8.5
tbd
A
ns
m/s
2
mm
mm
50
11.2
9.7
Data according to IEC 60747 refer to a single diode unless otherwise stated
x
for resistive load at bridge output.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1-2
032
VBE 17-12NO7
30
A
25
I
F
20
T
VJ
=150°C
2000
nC
1500
Q
r
T
VJ
= 100°C
V
R
= 600V
40
T
VJ
= 100°C
A
V
R
= 600V
I
F
= 20A
I
F
= 10A
I
F
= 5A
I
RM
30
15
T
VJ
=100°C
1000
20
I
F
= 20A
I
F
= 10A
I
F
= 5A
10
T
VJ
= 25°C
500
10
5
0
0
1
2
3
V
F
4V
0
100
0
0
200
400
A/
m
s 1000
-di
F
/dt
600 A/
m
s 1000
800
-di
F
/dt
Fig. 1 Forward current I
F
versus V
F
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
150
ns
140
T
VJ
= 100°C
V
R
= 600V
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
120
V
V
FR
t
fr
T
VJ
= 100°C
I
F
= 10A
V
FR
2.0
1.2
µs
t
fr
0.8
1.5
K
f
1.0
t
rr
130
120
110
I
F
= 20A
I
F
= 10A
I
F
= 5A
80
I
RM
40
0.4
0.5
Q
r
100
90
0
0
200
400
0.0
600 A/
m
s 1000
800
di
F
/dt
0.0
0
40
80
120 °C 160
T
VJ
0
200
400
600
-di
F
/dt
800
A/
m
s 1000
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
10
K/W
1
Z
thJC
0.1
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Constants for Z
thJC
calculation:
i
1
2
3
4
R
thi
(K/W)
0.8776
0.3378
0.0678
1.2168
t
i
(s)
0.0052
0.0003
0.0004
0.0092
0.01
0.001
0.0001
VBE17-12NO7 / VUE22-12NO7
0.001
0.01
0.1
1
t
s
10
Fig. 7 Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2000 IXYS All rights reserved
2-2
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