P011xx
Sensitive high immunity SCRs up to 0.8 A
Features
■
■
■
A
I
T(RMS)
up to 0.8 A
V
DRM
/V
RRM
400 and 600 V
I
GT
from 0.5 to 25 µA
G
K
Description
Thanks to highly sensitive triggering levels, the
P011xx SCR series is suitable for all applications
where available gate current is limited, such as
ground fault circuit interruptors, pilot circuits in
solid state relays, standby mode power supplies,
smoke and alarm detectors.
Available in through-hole or surface-mount
packages, the voltage capability of this series has
been upgraded since its introduction and is now
available up to 600 V.
Table 1.
Device summary
Voltage
Order code
400 V
P0111DA 1AA3
P0111DA 5AL3
P0111DN 5AA4
P0111MA 1AA3
P0111MA2AL3
(1)
P0111MN 5AA4
P0115DA 1AA3
P0115DA 5AL3
P0118DA 1AA3
P0118DA 5AL3
P0118DN 5AA4
P0118MA 2AL3
P0118MA 5AL3
1. This order code has no space.
KA
K
G
A
G
A
TO-92
(P011xxA)
SOT-223
(P011xxN)
Sensitivity
Package
600 V
Min.
4 µA
4 µA
4 µA
X
X
X
4 µA
4 µA
4 µA
15 µA
15 µA
0.5 µA
0.5 µA
0.5 µA
X
X
0.5 µA
0.5 µA
Max.
25 µA
25 µA
25 µA
25 µA
25 µA
25 µA
50 µA
50 µA
5 µA
5 µA
5 µA
5 µA
5 µA
TO-92
TO-92
SOT-223
TO-92
TO-92
SOT-223
TO-92
TO-92
TO-92
TO-92
SOT-223
TO-92
TO-92
X
X
X
X
X
X
X
X
January 2009
Rev 1
1/9
www.st.com
9
Characteristics
P011xx
1
Table 2.
Symbol
I
T(RMS)
Characteristics
Absolute ratings (limiting values)
Parameter
TO-92
RMS on-state current (180° conduction angle)
SOT-223
TO-92
IT
(AV)
Average on-state current (180° conduction angle)
SOT-223
Non repetitive surge peak on-state current
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 10 ms
F = 60 Hz
t
p
= 20 µs
T
l
= 55 °C
T
amb
= 70 °C
T
l
= 55 °C
T
amb
= 70 °C
8
T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
A
7
0.24
50
1
0.1
- 40 to + 150
- 40 to + 125
A
2
S
A/µs
A
W
°C
0.5
A
Value
0.8
Unit
A
I
TSM
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
Table 3.
Symbol
I
GT
V
GT
V
GD
V
RG
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Test conditions
Min.
V
D
= 12 V
R
L
= 140
Ω
Max.
Max.
V
D
= V
DRM
R
L
= 3.3 kΩ R
GK
= 1 kΩ
I
RG
= 10 µA
I
T
= 50 mA
I
G
= 1 mA
R
GK
= 1 kΩ
R
GK
= 1 kΩ
R
GK
= 1 kΩ
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
R
GK
= 1 kΩ
R
GK
= 1 kΩ
R
GK
= 1 kΩ
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
Min.
Min.
Max.
Max.
Min.
Max.
Max.
Max.
80
P0111
4
25
P0115
15
50
0.8
0.1
8
5
6
75
1.95
0.95
600
1
Max.
10
100
µA
75
P0118
0.5
µA
5
V
V
V
mA
mA
V/µs
V
V
mΩ
Unit
V
D
= 67 % V
DRM
I
TM
= 1.6 A
tp = 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
= 400 V
V
DRM
= V
RRM
= 600 V
V
DRM
= V
RRM
2/9
P011xx
Table 4.
Symbol
R
th(j-a)
R
th(j-t)
R
th(j-a)
Junction to case (DC)
Junction to tab (DC)
Junction to ambient (DC)
Characteristics
Thermal resistance
Parameter
TO-92
SOT-223
TO-92
S
(1)
= 5 cm
2
SOT-223
Maximum
80
30
150
°C/W
60
Unit
°C/W
°C/W
1. S = Copper surface under tab.
Figure 1.
Maximum average power
Figure 2.
dissipation versus average on-state
current
I
T(AV)
(A)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
Average and DC on-state current
versus lead temperature
P(W)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.1
0.2
0.3
0.4
360°
α
= 180°
D.C.
(SOT-223)
D.C.
(TO-92)
α
= 180°
(SOT-223)
0.4
0.3
0.2
α
= 180°
(TO-92)
I
T(AV)
(A)
α
0.5
0.6
0.1
0.0
0
25
50
T
lead
(°C)
75
100
125
Figure 3.
Average and DC on-state current
versus ambient temperature
Figure 4.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
I
T(AV)
(A)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
α
= 180°
(TO-92)
D.C.
(SOT-223)
K=[Z
th(j-a)
/R
th(j-a)
]
1.00
Device mounted on FR4 with
recommended pad layout
TO-92
D.C.
(TO-92)
α
= 180°
(SOT-223)
0.10
SOT-223
T
amb
(°C)
75
100
125
t
p
(s)
0.01
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
3/9
Characteristics
P011xx
Figure 5.
Relative variation of gate trigger,
Figure 6.
holding and latching current versus
junction temperature
20
Relative variation of holding
current versus gate-cathode
resistance (typical values)
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25°C]
6
5
4
3
I
GT
I
H
[R
GK
] / I
H
[R
GK
=1k
Ω
]
T
j
= 25°C
18
typical values
16
14
12
10
8
6
2
1
0
-40
-20
0
20
40
60
80
100
120
140
0
1E-2
1E-1
I
H
& I
L
R
GK
= 1k
Ω
4
T
j
(°C)
2
R
GK
(k
Ω
)
1E+0
1E+1
Figure 7.
Relative variation of dV/dt immunity Figure 8.
versus gate-cathode resistance
(typical values).
10
T
j
= 125°C
V
D
= 0.67 x V
DRM
Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values)
dV/dt[R
GK
] / dV/dt[R
GK
=1k
Ω
]
10.0
dV/dt[C
GK
] / dV/dt[R
GK
=1k
Ω
]
V
D
= 0.67 x V
DRM
T
j
= 125°C
R
GK
= 1k
Ω
8
6
1.0
4
2
0.1
0
0.2
0.4
0.6
0.8
R
GK
(k
Ω
)
0
1.0
1.2
1.4
1.6
1.8
2.0
C
GK
(nF)
0
1
2
3
4
5
6
7
Figure 9.
Surge peak on-state current versus Figure 10. Non-repetitive surge peak on-state
number of cycles
current and corresponding value
of I²t
I
TSM
(A), I
2
t (A
2
s)
100.0
T
j
initial = 25°C
I
TSM
(A)
8
7
6
5
4
3
2
Repetitive
T
amb
=25°C
Non repetitive
T
j
initial=25°C
t
p
=10ms
One cycle
I
TSM
10.0
sinusoidal pulse with
width t
p
< 10ms
1.0
I
2
t
1
0
1
10
Number of cycles
100
1000
t
p
(ms)
0.1
0.01
0.10
1.00
10.00
4/9
P011xx
Ordering information scheme
Figure 11. On-state characteristics (maximum Figure 12. Thermal resistance junction to
values)
ambient versus copper surface
under tab
I
TM
(A)
1E+1
T
j
max.:
V
t0
=0.95V
R
d
=600m
Ω
R
th(j-a)
(°C/W)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
3.0
3.5
4.0
4.5
Epoxy printed circuit board FR4,
copper thickness: 35 µm
1E+0
T
j
=max
T
j
=25°C
1E-1
1E-2
0.5
1.0
1.5
2.0
V
TM
(V)
2.5
S(cm²)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
2
Ordering information scheme
Figure 13. Ordering information scheme
P
01 1x
x
x
Blank
xAxx
Sensitive SCR series
Current
01 up to 0.8 A
Sensitivity
11 = 4 to 25 µA
15 = 15 to 50 µA
18 = 0.5 to 5 µA
Voltage
D = 400 V
M = 600 V
Package
A = TO-92
N = SOT-223
Packing mode
1AA3 = Bulk
2AL3 = Ammopack
5AL3 = Tape and reel 13 inch
5AA4 = Tape and reel 7 inch
5/9
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