GKN240/04 thru GKN240/18
Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types up to 1800 V V
RRM
• Equivalent to SKN240 Series
DO-9 Package
V
RRM
= 400 V - 1800 V
I
F
=320 A
2
1
2
1
GKN
Maximum ratings, at T
j
= 25 °C, unless otherwise specified (GKR has leads reversed)
Parameter
Repetitive peak reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
DC
I
F
T
C
≤
100 °C
I
F,SM
T
C
= 25 °C, t
p
= 10 ms
T
j
T
stg
Conditions
GKN240/04 GKN240/08 GKN240/12 GKN240/14 GKN240/16GKN240/18 Unit
400
400
320
6000
-40 to 180
-55 to 180
800
800
320
6000
-40 to 180
-55 to 180
1200
1200
320
6000
-40 to 180
-55 to 180
1400
1400
320
6000
1600
1600
320
6000
1800
1800
320
6000
V
V
A
A
-40 to 180 -40 to 180 -40 to 180 °C
-55 to 180 -55 to 180 -55 to 180 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 60 A, T
j
= 25 °C
V
R
= V
RRM
, T
j
= 180 °C
GKN240/04 GKN240/08 GKN240/12 GKN240/14 GKN240/16GKN240/18 Unit
1.4
60
1.4
60
1.4
60
1.4
60
1.4
60
1.4
60
V
mA
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
0.20
0.20
0.20
0.20
0.20
0.20
K/W
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GKN240/04 thru GKN240/18
Fig 1: Forward Characteristics
Fig 2: Forward Current vs Case Temp
Fig 3: Transient Thermal Impedence vs Time
Fig 4: Power Dissipation vs Forward Current
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