2N7002BKM
60 V, 450 mA N-channel Trench MOSFET
Rev. 1 — 25 October 2010
BOTTOM VIEW
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
Conditions
T
amb
= 25
°C
T
amb
= 25
°C
T
amb
= 25
°C;
V
GS
= 10 V
T
j
= 25
°C;
V
GS
= 10 V;
I
D
= 500 mA
[1]
Min
-
-
-
-
Typ
-
-
-
1
Max
60
±20
450
1.6
Unit
V
V
mA
Ω
[2]
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
Pulse test: t
p
≤
300
μs; δ ≤
0.01.
NXP Semiconductors
2N7002BKM
60 V, 450 mA N-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Symbol
G
S
D
Description
gate
source
drain
1
3
2
Transparent
top view
G
D
Simplified outline
Graphic symbol
S
017aaa000
3. Ordering information
Table 3.
Ordering information
Package
Name
2N7002BKM
SC-101
Description
leadless ultra small plastic package; 3 solder lands;
body 1.0
×
0.6
×
0.5 mm
Version
SOT883
Type number
4. Marking
Table 4.
Marking codes
Marking code
Z8
Type number
2N7002BKM
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
Parameter
drain-source voltage
gate-source voltage
drain current
Conditions
T
amb
= 25
°C
T
amb
= 25
°C
V
GS
= 10 V
T
amb
= 25
°C
T
amb
= 100
°C
I
DM
peak drain current
T
amb
= 25
°C;
single pulse; t
p
≤
10
μs
[1]
Min
-
-
-
-
-
Max
60
±20
450
220
1.2
Unit
V
V
mA
mA
A
2N7002BKM
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 25 October 2010
2 of 16
NXP Semiconductors
2N7002BKM
60 V, 450 mA N-channel Trench MOSFET
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
Parameter
total power dissipation
Conditions
T
amb
= 25
°C
T
sp
= 25
°C
T
j
T
amb
T
stg
I
S
V
ESD
junction temperature
ambient temperature
storage temperature
source current
electrostatic discharge
voltage
T
amb
= 25
°C
human body model
[1]
[2]
[1]
Min
-
-
-
−55
−65
-
-
Max
360
715
2700
150
+150
+150
450
2000
Unit
mW
mW
mW
°C
°C
°C
mA
V
Source-drain diode
ESD maximum rating
[3]
[1]
[2]
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Measured between all pins.
120
P
der
(%)
80
017aaa001
120
I
der
(%)
80
017aaa002
40
40
0
−75
−25
25
75
125
175
T
amb
(°C)
0
−75
−25
25
75
125
175
T
amb
(°C)
P
tot
-
P
der
=
-----------------------
×
100
%
P
tot
(
25°C
)
Fig 1.
Normalized total power dissipation as a
function of ambient temperature
Fig 2.
I
D
-
I
der
=
-------------------
×
100
%
I
D
(
25°C
)
Normalized continuous drain current as a
function of ambient temperature
2N7002BKM
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 25 October 2010
3 of 16
NXP Semiconductors
2N7002BKM
60 V, 450 mA N-channel Trench MOSFET
10
I
D
(A)
1
Limit R
DSon
= V
DS
/I
D
017aaa108
(1)
10
−1
(2)
(3)
(4)
(5)
10
−2
10
-1
(6)
1
10
V
DS
(V)
10
2
I
DM
= single pulse
(1) t
p
= 100
μs
(2) t
p
= 1 ms
(3) DC; T
sp
= 25
°C
(4) t
p
= 10 ms
(5) t
p
= 100 ms
(6) DC; T
amb
= 25
°C;
drain mounting pad 1 cm
2
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of
drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
[2]
Min
-
-
-
Typ
305
150
-
Max
350
175
40
Unit
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
2N7002BKM
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 25 October 2010
4 of 16
NXP Semiconductors
2N7002BKM
60 V, 450 mA N-channel Trench MOSFET
10
3
017aaa109
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
10
2
0.25
0.1
0.2
0.05
0.02
0.01
0
10
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 4.
10
3
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa110
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
10
2
0.5
0.25
0.1
0.05
0.02
0.01
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
0.33
0.2
0
10
10
−3
FR4 PCB, mounting pad for drain 1 cm
2
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
2N7002BKM
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 25 October 2010
5 of 16
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