EEWORLDEEWORLDEEWORLD

Part Number

Search

KSD1616ALTA

Description
transistors bipolar - bjt npn epitaxial transistor
CategoryDiscrete semiconductor    The transistor   
File Size205KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

KSD1616ALTA Online Shopping

Suppliers Part Number Price MOQ In stock  
KSD1616ALTA - - View Buy Now

KSD1616ALTA Overview

transistors bipolar - bjt npn epitaxial transistor

KSD1616ALTA Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Manufacturer packaging code3 LD, TO92, MOLDED 0.200 IN LINE SPACING LD FORM
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)300
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.75 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)160 MHz
KSD1616/1616A — Audio Frequency Power Amplifier & Medium Speed Switching
November 2007
KSD1616/1616A
Audio Frequency Power Amplifier & Medium Speed Switching
• Complement to KSB1116/1116A
1
TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
: KSD1616
: KSD1616A
: KSD1616
: KSD1616A
Ratings
60
120
50
60
6
1
2
0.75
150
-55 ~ 150
Units
V
V
V
V
V
A
A
W
°C
°C
* PW≤10ms, Duty Cycle < 50%
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
BE
(on)
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
* Base-Emitter On Voltage
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: KSD1616
: KSD1616A
Test Condition
V
CB
=60V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=2V, I
C
=100mA
V
CE
=2V, I
C
=1A
V
CE
=2V, I
C
=50mA
I
C
=1A, I
B
=50mA
I
C
=1A, I
B
=50mA
V
CE
=10V, I
E
=0, f=1MHz
V
CE
=2V, I
C
=100mA
V
CC
=10V, I
C
=100mA
I
B1
= -I
B2
=10mA
V
BE
(off) = -2~-3V
100
135
135
81
600
640
0.15
0.9
19
160
0.07
0.95
0.07
Min.
Typ.
Max.
100
100
600
400
700
0.3
1.2
mV
V
V
pF
MHz
μs
μs
μs
Units
nA
nA
* Pulse Test: PW<350μs, Duty Cycle≤2% Pulsed
© 2007 Fairchild Semiconductor Corporation
KSD1616/1616A Rev. 1.0.0
1
www.fairchildsemi.com

KSD1616ALTA Related Products

KSD1616ALTA KSD1616AYTA KSD1616ALBU KSD1616YTA KSD1616AYBU
Description transistors bipolar - bjt npn epitaxial transistor transistors bipolar - bjt npn epitaxial transistor transistor npn 60v 1A TO-92 transistor npn 50v 1A TO-92 transistor npn 60v 1A TO-92
Is it lead-free? Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker Fairchild Fairchild Fairchild Fairchild Fairchild
Reach Compliance Code compli compli unknow compli unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Brand Name Fairchild Semiconduc Fairchild Semiconduc - Fairchild Semiconduc -
Parts packaging code TO-92 TO-92 - TO-92 -
Contacts 3 3 - 3 -
Manufacturer packaging code 3 LD, TO92, MOLDED 0.200 IN LINE SPACING LD FORM 3 LD, TO92, MOLDED 0.200 IN LINE SPACING LD FORM - 3 LD, TO92, MOLDED 0.200 IN LINE SPACING LD FORM -
Maximum collector current (IC) 1 A 1 A - 1 A 1 A
Collector-emitter maximum voltage 60 V 60 V - 50 V 60 V
Configuration SINGLE SINGLE - SINGLE SINGLE
Minimum DC current gain (hFE) 300 135 - 135 135
JEDEC-95 code TO-92 TO-92 - TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 - O-PBCY-T3 O-PBCY-T3
JESD-609 code e3 e3 - e3 e3
Number of components 1 1 - 1 1
Number of terminals 3 3 - 3 3
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND - ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL - CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED - NOT APPLICABLE NOT APPLICABLE
Polarity/channel type NPN NPN - NPN NPN
Maximum power dissipation(Abs) 0.75 W 0.75 W - 0.75 W 0.75 W
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified
surface mount NO NO - NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) - Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM - BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - NOT APPLICABLE NOT APPLICABLE
transistor applications SWITCHING SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON SILICON - SILICON SILICON
Nominal transition frequency (fT) 160 MHz 160 MHz - 160 MHz 160 MHz

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2794  802  1094  2393  1655  57  17  23  49  34 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号