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KSD1616ALBU

Description
transistor npn 60v 1A TO-92
CategoryDiscrete semiconductor    The transistor   
File Size205KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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KSD1616ALBU Overview

transistor npn 60v 1A TO-92

KSD1616ALBU Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Reach Compliance Codeunknow
ECCN codeEAR99
KSD1616/1616A — Audio Frequency Power Amplifier & Medium Speed Switching
November 2007
KSD1616/1616A
Audio Frequency Power Amplifier & Medium Speed Switching
• Complement to KSB1116/1116A
1
TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
: KSD1616
: KSD1616A
: KSD1616
: KSD1616A
Ratings
60
120
50
60
6
1
2
0.75
150
-55 ~ 150
Units
V
V
V
V
V
A
A
W
°C
°C
* PW≤10ms, Duty Cycle < 50%
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
BE
(on)
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
* Base-Emitter On Voltage
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: KSD1616
: KSD1616A
Test Condition
V
CB
=60V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=2V, I
C
=100mA
V
CE
=2V, I
C
=1A
V
CE
=2V, I
C
=50mA
I
C
=1A, I
B
=50mA
I
C
=1A, I
B
=50mA
V
CE
=10V, I
E
=0, f=1MHz
V
CE
=2V, I
C
=100mA
V
CC
=10V, I
C
=100mA
I
B1
= -I
B2
=10mA
V
BE
(off) = -2~-3V
100
135
135
81
600
640
0.15
0.9
19
160
0.07
0.95
0.07
Min.
Typ.
Max.
100
100
600
400
700
0.3
1.2
mV
V
V
pF
MHz
μs
μs
μs
Units
nA
nA
* Pulse Test: PW<350μs, Duty Cycle≤2% Pulsed
© 2007 Fairchild Semiconductor Corporation
KSD1616/1616A Rev. 1.0.0
1
www.fairchildsemi.com

KSD1616ALBU Related Products

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Description transistor npn 60v 1A TO-92 transistors bipolar - bjt npn epitaxial transistor transistors bipolar - bjt npn epitaxial transistor transistor npn 50v 1A TO-92 transistor npn 60v 1A TO-92
Is it lead-free? Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker Fairchild Fairchild Fairchild Fairchild Fairchild
Reach Compliance Code unknow compli compli compli unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Brand Name - Fairchild Semiconduc Fairchild Semiconduc Fairchild Semiconduc -
Parts packaging code - TO-92 TO-92 TO-92 -
Contacts - 3 3 3 -
Manufacturer packaging code - 3 LD, TO92, MOLDED 0.200 IN LINE SPACING LD FORM 3 LD, TO92, MOLDED 0.200 IN LINE SPACING LD FORM 3 LD, TO92, MOLDED 0.200 IN LINE SPACING LD FORM -
Maximum collector current (IC) - 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage - 60 V 60 V 50 V 60 V
Configuration - SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) - 135 300 135 135
JEDEC-95 code - TO-92 TO-92 TO-92 TO-92
JESD-30 code - O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code - e3 e3 e3 e3
Number of components - 1 1 1 1
Number of terminals - 3 3 3 3
Maximum operating temperature - 150 °C 150 °C 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - ROUND ROUND ROUND ROUND
Package form - CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT APPLICABLE NOT APPLICABLE
Polarity/channel type - NPN NPN NPN NPN
Maximum power dissipation(Abs) - 0.75 W 0.75 W 0.75 W 0.75 W
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified
surface mount - NO NO NO NO
Terminal surface - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location - BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT APPLICABLE NOT APPLICABLE
transistor applications - SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) - 160 MHz 160 MHz 160 MHz 160 MHz
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