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FCPF190N60_F152

Description
mosfet 600v, 20.2A, 199mohm superfet II mosfet
Categorysemiconductor    Discrete semiconductor   
File Size640KB,10 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance  
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mosfet 600v, 20.2A, 199mohm superfet II mosfet

FCPF190N60_F152 Parametric

Parameter NameAttribute value
ManufactureFairchild Semiconduc
Product CategoryMOSFET
RoHSYes
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Curre20.2 A
Rds On - Drain-Source Resistance199 mOhms
Package / CaseTO-220-3
Factory Pack Quantity50
FCP190N60 / FCPF190N60 — N-Channel SuperFET
®
II MOSFET
December 2013
FCP190N60 / FCPF190N60
N-Channel SuperFET
®
II MOSFET
600 V, 20.2 A, 199 mΩ
Features
• 650 V @ T
J
= 150°C
• Typ. R
DS(on)
= 170 mΩ
• Ultra Low Gate Charge (Typ. Q
g
= 57 nC)
• Low Effective Output Capacitance (Typ. C
oss(eff.)
= 160 pF)
• 100% Avalanche Tested
• RoHS Compliant
Description
SuperFET
®
II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
Applications
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply
D
GD
S
TO-220
o
G
D
S
G
TO-220F
S
Absolute Maximum Ratings
T
C
= 25 C unless otherwise noted.
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25
o
C)
- Derate Above 25 C
o
Parameter
- DC
- AC
- Continuous (T
C
= 25
o
C)
- Continuous (T
C
= 100 C)
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
o
FCP190N60 FCPF190N60
600
±20
(f > 1 Hz)
20.2
12.7
60.6
400
4.0
2.1
100
20
208
1.67
-55 to +150
300
39
0.31
±30
20.2*
12.7*
60.6*
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
o
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
C
C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
1
FCP190N60
0.6
62.5
FCPF190N60
3.2
62.5
Unit
o
C/W
©2012 Fairchild Semiconductor Corporation
FCP190N60 / FCPF190N60 Rev. C16
www.fairchildsemi.com
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