CREAT BY ART
SMA/DO-214AC
1.0AMP Surface Mount Schottky Barrier Rectifier
SS12 - SS115
Features
For surface mounted application
Easy pick and place
Metal to silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low VF
High surge current capability
Meet MSL level 1, per J-STD-020D,
lead free maximum peak of 260℃
Plastic material used carriers Underwriters
Laboratory Classigication 94V-0
Epitaxial construction
High temperature soldering guaranteed:
260℃/10s at terminals
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case: JEDEC SMA/DO-214AC Molded plastic
Terminal: Pure tin plated, lead free
Polarity: Indicated by cathode band
Packaging: 12 mm tape per EIA STD RS-481
Weight: 0.066 gram
Ordering Information (example)
Part No.
SS12
Package
SMA
Packing
1.8K / 7" REEL
Packing
code
R3
Green Compound
Packing code
R3G
Maximum Ratings and Electrical Characteristics
Rating at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
IF = 1 A @ 25℃
IF = 1 A @100℃
Maximum Reverse Current @ Rated VR T
A
=25
℃
T
A
=100℃
T
A
=125
℃
Typical Junction Capecitance (Note 2)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note1: Pulse Test with PW=300u sec, 1% Duty Cycle
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
SS
12
20
14
20
SS
13
30
21
30
SS
14
40
28
40
SS
15
50
35
50
1
40
SS
16
60
42
60
SS
19
90
63
90
SS
110
100
70
100
SS
115
150
105
150
Unit
V
V
V
A
A
V
F
0.5
0.4
0.4
0.75
0.65
0.80
0.70
0.1
0.95
0.85
V
mA
mA
mA
pF
O
I
R
C
j
R
θjL
R
θjA
T
J
T
STG
10
-
5
-
50
28
88
-
2
C/W
O
O
- 65 to + 125
- 65 to + 150
- 65 to + 150
C
C
Note2: Measured at 1 MHz and Applied Reverse Voltagr of 4.0V D.C.
Version:J13
RATINGS AND CHARACTERISTIC CURVES (SS12 THRU SS115)
FIG.1 FORWARD CURRENT DERATING CUURVE
1.2
AVERAGE FORWARD CURRENT
(A)
PEAK FORWARD SURGE CURRENT (A)
40
30
20
10
0
1
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half
Sine-Wave
1
0.8
0.6
0.4
0.2
0
50
60
70
SS12-SS14
SS15-SS115
RESISTIVE OR
INDUCTIVE LOAD
80
90
100 110 120 130 140 150 160 170
10
NUMBER OF CYCLES AT 60 Hz
100
LEAD TEMPERATURE (
o
C)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS FORWARD CURRENT
(A)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
100
SS12-SS14
SS15-SS115
TA=125℃
10
10
SS15-SS16
1
1
SS12-SS14
SS115
0.1
TA=75℃
0.1
SS19-SS110
0.01
TA=25℃
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
FORWARD VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
100
1000
SS12-SS14
SS15-SS16
SS19-SS115
TRANSIENT THERMAL
IMPEDANCE (℃/W)
CAPACITANCE (pF)
10
100
TA=25℃
f=1.0MHz
Vslg=50mVp-p
1
10
0.1
1
10
100
REVERSE VOLTAGE (V)
0.1
0.01
0.1
1
T-PULSE DURATION(s)
10
100
Version:J13
Embedded System
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