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MRF6S19140HSR3

Description
transistors RF mosfet hv6 28v29w ldmos ni880hs
Categorysemiconductor    Discrete semiconductor   
File Size401KB,11 Pages
ManufacturerFREESCALE (NXP)
Environmental Compliance  
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transistors RF mosfet hv6 28v29w ldmos ni880hs

MRF6S19140HSR3 Parametric

Parameter NameAttribute value
ManufactureFreescale Semiconduc
Product CategoryTransistors RF MOSFET
RoHSYes
ConfiguratiSingle
Transistor PolarityN-Channel
Frequency1.93 GHz to 1.99 GHz
Gai16 dB
Output Powe29 W
Vds - Drain-Source Breakdown Voltage68 V
Vgs - Gate-Source Breakdown Voltage- 0.5 V, + 12 V
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseNI-880S-3
PackagingReel
Minimum Operating Temperature- 65 C
Pd - Power Dissipati52.8 W
Factory Pack Quantity250
Vgs th - Gate-Source Threshold Voltage3 V
Unit Weigh6.758 g
Freescale Semiconductor
Technical Data
Document Number: MRF6S19140H
Rev. 5, 5/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
Typical 2 - Carrier N - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1150 mA,
P
out
= 29 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz,
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 27.5%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 140 Watts CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S19140HR3
MRF6S19140HSR3
1930 - 1990 MHz, 29 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF6S19140HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF6S19140HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 140 W CW
Case Temperature 77°C, 29 W CW
Symbol
R
θJC
Value
(2,3)
0.33
0.38
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2004-2007. All rights reserved.
MRF6S19140HR3 MRF6S19140HSR3
1
RF Device Data
Freescale Semiconductor

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