Doc No.
TT4-EA-11601
Revision.
3
Product Standards
Transistors with Built-in Resistor
DRC5123J0L
DRC5123J0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA5123J
DRC2123J in SMini3 type package
Features
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1
2
Unit: mm
2.0
0.3
3
0.13
1.25
2.1
0.9
(0.65)
(0.65)
1.3
Marking Symbol: N4
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Base
2. Emitter
3. Collector
Panasonic
JEITA
Code
SMini3-F2-B
SC-85
―
Absolute Maximum Ratings Ta = 25
C
Parameter
Symbol
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Operating ambient temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Topr
Tstg
Rating
50
50
100
150
150
-40 to +85
-55 to +150
Unit
V
V
mA
mW
°C
°C
°C
Internal Connection
B
R
1
R
2
C
E
Resistance
value
Electrical Characteristics Ta = 25
C
3
C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
Collector-emitter voltage (Base open)
VCEO
Collector-base cutoff current (Emitter open)
ICBO
Collector-emitter cutoff current (Base open)
ICEO
Emitter-base cutoff current (Collector open)
IEBO
Forward current transfer ratio
hFE
Collector-emitter saturation voltage
VCE(sat)
Vi(on)
Input voltage
Vi(off)
Input resistance
R1
Resistance ratio
R1/R2
R1
R2
Typ
2.2
47
k
k
Conditions
IC = 10
μA,
IE = 0
IC = 2 mA, IB = 0
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 6 V, IC = 0
VCE = 10 V, IC = 5 mA
IC = 10 mA, IB = 0.5 mA
VCE = 0.2 V, IC = 5 mA
VCE = 5 V, IC = 100
μA
Min
50
50
Max
0.1
0.5
0.2
Unit
V
V
μA
μA
mA
-
V
V
V
k
-
80
0.25
1.2
0.4
-30% 2.2 +30%
0.037
0.047
0.057
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Page 1 of 3
Established : 2009-10-15
Revised
: 2014-03-20
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