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PESD3V3U1UT,215

Description
tvs diode arrays 3.3 esd protection
CategoryDiscrete semiconductor    diode   
File Size100KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PESD3V3U1UT,215 Overview

tvs diode arrays 3.3 esd protection

PESD3V3U1UT,215 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-236
package instructionPLASTIC PACKAGE-3
Contacts3
Manufacturer packaging codeSOT23
Reach Compliance Codecompli
ECCN codeEAR99
Maximum breakdown voltage6.9 V
Minimum breakdown voltage5.8 V
Breakdown voltage nominal value6.4 V
Maximum clamping voltage20 V
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation80 W
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage3.3 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
Rev. 02 — 20 August 2009
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23
(TO-236AB) small SMD plastic package designed to protect one high-speed data line
from the damage caused by ESD and other transients.
1.2 Features
I
I
I
I
Unidirectional ESD protection of one line
Ultra low diode capacitance: C
d
= 0.6 pF
Max. peak pulse power: P
PP
up to 200 W
Low clamping voltage
I
ESD protection > 23 kV
I
IEC 61000-4-2; level 4 (ESD)
I
IEC 61000-4-5; (surge)
1.3 Applications
I
10/100/1000 Ethernet
I
FireWire
I
Communication systems
I
Local Area Network (LAN) equipment
I
Computers and peripherals
I
High-speed data lines
1.4 Quick reference data
Table 1.
Symbol
V
RWM
Quick reference data
Parameter
reverse stand-off voltage
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
C
d
[1]
Conditions
Min
-
-
-
-
-
Typ
-
-
-
-
-
0.6
Max
3.3
5.0
12
15
24
1.5
Unit
V
V
V
V
V
pF
diode capacitance
Measured from pin 1 to 2
f = 1 MHz; V
R
= 0 V
[1]
-

PESD3V3U1UT,215 Related Products

PESD3V3U1UT,215 PESD5V0U1UT,215 PESD15VU1UT,215 PESD12VU1UT,215 PESD24VU1UT,215
Description tvs diode arrays 3.3 esd protection tvs diode arrays 5V esd protection ultra low cap tvs diode arrays 15v esd protection ultra low cap tvs diode arrays 12v esd protection tvs diode arrays 24v esd protection
Brand Name NXP Semiconduc NXP Semiconduc NXP Semiconduc NXP Semiconduc NXP Semiconduc
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker NXP NXP NXP NXP NXP
Parts packaging code TO-236 TO-236 TO-236 TO-236 TO-236
package instruction PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
Contacts 3 3 3 3 3
Manufacturer packaging code SOT23 SOT23 SOT23 SOT23 SOT23
Reach Compliance Code compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Maximum breakdown voltage 6.9 V 8.2 V 20.3 V 16.7 V 30.3 V
Minimum breakdown voltage 5.8 V 7 V 17.1 V 14.2 V 25.4 V
Breakdown voltage nominal value 6.4 V 7.6 V 18.9 V 15 V 27.8 V
Maximum clamping voltage 20 V 21 V 53 V 39 V 76 V
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1 1
Maximum non-repetitive peak reverse power dissipation 80 W 80 W 200 W 200 W 200 W
Number of components 2 2 2 2 2
Number of terminals 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260 260
polarity UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 3.3 V 5 V 15 V 12 V 24 V
surface mount YES YES YES YES YES
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 40 40 40
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