PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
Rev. 02 — 20 August 2009
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23
(TO-236AB) small SMD plastic package designed to protect one high-speed data line
from the damage caused by ESD and other transients.
1.2 Features
I
I
I
I
Unidirectional ESD protection of one line
Ultra low diode capacitance: C
d
= 0.6 pF
Max. peak pulse power: P
PP
up to 200 W
Low clamping voltage
I
ESD protection > 23 kV
I
IEC 61000-4-2; level 4 (ESD)
I
IEC 61000-4-5; (surge)
1.3 Applications
I
10/100/1000 Ethernet
I
FireWire
I
Communication systems
I
Local Area Network (LAN) equipment
I
Computers and peripherals
I
High-speed data lines
1.4 Quick reference data
Table 1.
Symbol
V
RWM
Quick reference data
Parameter
reverse stand-off voltage
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
C
d
[1]
Conditions
Min
-
-
-
-
-
Typ
-
-
-
-
-
0.6
Max
3.3
5.0
12
15
24
1.5
Unit
V
V
V
V
V
pF
diode capacitance
Measured from pin 1 to 2
f = 1 MHz; V
R
= 0 V
[1]
-
NXP Semiconductors
PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
cathode ESD protection diode
cathode compensation diode
common anode
1
2
1
2
006aaa441
Simplified outline
3
Symbol
3
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
-
Description
plastic surface mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
*AP
*AQ
*AR
*AS
*AT
Type number
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PESDXU1UT_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
2 of 13
NXP Semiconductors
PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PP
Parameter
peak pulse power
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
I
PP
peak pulse current
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
T
j
T
amb
T
stg
[1]
Conditions
8/20
µs
[1]
Min
-
-
-
-
-
Max
80
80
200
200
200
5
5
5
5
3
150
+150
+150
Unit
W
W
W
W
W
A
A
A
A
A
°C
°C
°C
8/20
µs
[1]
-
-
-
-
-
-
−65
−65
junction temperature
ambient temperature
storage temperature
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
PESDXU1UT_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
3 of 13
NXP Semiconductors
PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
ESD maximum ratings
Parameter
electrostatic discharge voltage
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
PESDxU1UT
HBM MIL-STD-883
Conditions
IEC 61000-4-2
(contact discharge)
[1][2]
Table 6.
Symbol
V
ESD
Min
Max
Unit
-
-
-
-
-
-
30
30
30
30
23
10
kV
kV
kV
kV
kV
kV
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to 2
Table 7.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
HBM MIL-STD-883; class 3
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
µs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
µs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (µs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
µs
pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
PESDXU1UT_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
4 of 13
NXP Semiconductors
PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol
V
RWM
Parameter
reverse stand-off voltage
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
I
RM
reverse leakage current
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
V
BR
breakdown voltage
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
C
d
V
CL
diode capacitance
clamping voltage
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
r
dif
differential resistance
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
[1]
[2]
Conditions
Min
-
-
-
-
-
Typ
-
-
-
-
-
0.25
0.03
<1
<1
<1
6.4
7.6
15.0
18.9
27.8
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
3.3
5.0
12
15
24
2
1
50
50
50
6.9
8.2
16.7
20.3
30.3
1.5
9
20
12
21
23
39
28
53
40
76
400
80
200
225
300
Unit
V
V
V
V
V
µA
µA
nA
nA
nA
V
V
V
V
V
pF
V
V
V
V
V
V
V
V
V
V
Ω
Ω
Ω
Ω
Ω
V
RWM
= 3.3 V
V
RWM
= 5.0 V
V
RWM
= 12 V
V
RWM
= 15 V
V
RWM
= 24 V
I
R
= 5 mA
[2]
-
-
-
-
-
5.8
7.0
14.2
17.1
25.4
f = 1 MHz; V
R
= 0 V
I
PP
= 1 A
I
PP
= 5 A
I
PP
= 1 A
I
PP
= 5 A
I
PP
= 1 A
I
PP
= 5 A
I
PP
= 1 A
I
PP
= 5 A
I
PP
= 1 A
I
PP
= 3 A
I
R
= 1 mA
[2]
[1][2]
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to 2
© NXP B.V. 2009. All rights reserved.
PESDXU1UT_SER_2
Product data sheet
Rev. 02 — 20 August 2009
5 of 13
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