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AUIRLS4030TRL

Description
mosfet 100v 180a 4.3 mohm auto lgc lvl mosfet
CategoryDiscrete semiconductor    The transistor   
File Size304KB,13 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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AUIRLS4030TRL Overview

mosfet 100v 180a 4.3 mohm auto lgc lvl mosfet

AUIRLS4030TRL Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeD2PAK
package instructionROHS COMPLIANT, PLASTIC, D2PAK-3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresAVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)305 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)180 A
Maximum drain current (ID)180 A
Maximum drain-source on-resistance0.0043 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)370 W
Maximum pulsed drain current (IDM)730 A
surface mountYES
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
AUTOMOTIVE GRADE
Features
l
l
l
l
l
l
l
l
l
AUIRLS4030
AUIRLSL4030
HEXFET
®
Power MOSFET
D
Optimized for Logic Level Drive
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
S
V
DSS
R
DS(on)
typ.
max.
I
D
100V
3.4mΩ
4.3m
Ω
180A
Specifically designed for Automotive applications, this
HEXFET
®
Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Base Part Number
AUIRLS4030
AUIRLSL4030
Package Type
D2-Pak
TO-262 Pak
Description
G
S
D
S
D
G
TO-262
AUIRLSL4030
D
2
Pak
AUIRLS4030
G
D
S
Gate
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Tube
Drain
Source
Quantity
50
800
800
50
Orderable Part Number
AUIRLS4030
AUIRLS4030TRL
AUIRLS4030TRR
AUIRLSL4030
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
Avalanche Current
Repetitive Avalanche Energy
Max.
180
130
730
370
2.5
± 16
305
See Fig. 14, 15, 22a, 22b,
21
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
c
c
d
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
e
c
Thermal Resistance
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount) , D
2
Pak
ik
Parameter
Typ.
Max.
0.40
40
Units
°C/W
j
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
1
www.irf.com
©
2014 International Rectifier
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