LF
PHPT61003NY
3 February 2014
PA
K
56
100 V, 3 A NPN high power bipolar transistor
Product data sheet
1. General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device
(SMD) power plastic package.
PNP complement: PHPT61003PY
2. Features and benefits
•
•
•
•
•
High thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
•
•
•
•
Power management
Loadswitch
Linear mode voltage regulator
Backlighting applications
4. Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
R
CEsat
Quick reference data
Parameter
collector-emitter
voltage
collector current
peak collector current
collector-emitter
saturation resistance
single pulse; t
p
≤ 1 ms
I
C
= 3 A; I
B
= 300 mA; t
p
≤ 300 µs;
δ ≤ 0.02; pulsed
Conditions
open base
Min
-
-
-
-
Typ
-
-
-
75
Max
100
3
8
110
Unit
V
A
A
mΩ
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NXP Semiconductors
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
5. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
E
E
E
B
C
emitter
emitter
emitter
base
collector
1 2 3 4
Simplified outline
mb
Graphic symbol
C
B
E
sym123
LFPAK56; Power-
SO8 (SOT669)
6. Ordering information
Table 3.
Ordering information
Package
Name
PHPT61003NY
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
Version
SOT669
Type number
7. Marking
Table 4.
Marking codes
Marking code
1003NAB
Type number
PHPT61003NY
PHPT61003NY
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
3 February 2014
2 / 16
NXP Semiconductors
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
total power dissipation
T
amb
≤ 25 °C
[1]
[2]
[3]
[4]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
Max
100
100
7
3
8
0.5
1.25
3
5
25
175
175
175
Unit
V
V
V
A
A
A
W
W
W
W
°C
°C
°C
single pulse; t
p
≤ 1 ms
-
-
-
-
-
-
-
-55
-65
T
j
T
amb
T
stg
junction temperature
ambient temperature
storage temperature
[1]
[2]
[3]
[4]
Device mounted on an FR4 Printed-Circuit Board (PCB) single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm .
Device mounted on an ceramic PCB; Al
2
O
3
; standard footprint.
Power dissipation from junction to mounting base.
8
P
tot
(W)
6
(1)
aaa-010424
2
4
(2)
2
(3)
0
-75
25
125
T
amb
(°C)
225
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm
(3) FR4 PCB, standard footprint
Fig. 1.
PHPT61003NY
2
Power derating curves
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
3 February 2014
3 / 16
NXP Semiconductors
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
9. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
[1]
[2]
[3]
10
3
Z
th(j-a)
(K/W)
10
2
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
-
Typ
-
-
-
-
Max
115
50
30
6
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard
footprint.
Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 6 cm .
Device mounted on an ceramic PCB; Al
2
O
3
; standard footprint.
aaa-010427
2
duty cycle = 1
0.75
0.33
0.2
0.5
0.1
0.02
0
0.25
10
0.05
0.01
1
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PHPT61003NY
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
3 February 2014
4 / 16
NXP Semiconductors
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
10
2
Z
th(j-a)
(K/W)
10
duty cycle = 1
0.75
0.33
0.2
0.1
0.05
1
0.01
0.02
0
0.5
aaa-010428
0.25
10
-2
10
-5
10
-4
10
-3
10
-2
2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for collector 6 cm
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PHPT61003NY
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
3 February 2014
5 / 16
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