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MBR20060CT

Description
schottky diodes & rectifiers 60v 200a schottky recovery
CategoryDiscrete semiconductor    diode   
File Size760KB,3 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
Environmental Compliance
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MBR20060CT Overview

schottky diodes & rectifiers 60v 200a schottky recovery

MBR20060CT Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerGeneSiC
package instructionR-PUFM-X2
Reach Compliance Codecompli
ECCN codeEAR99
applicationPOWER
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.75 V
JESD-30 codeR-PUFM-X2
Maximum non-repetitive peak forward current1500 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-40 °C
Maximum output current100 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage60 V
Maximum reverse current5000 µA
surface mountNO
technologySCHOTTKY
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
MBR20045CT thru MBR200100CTR
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types up to 100 V V
RRM
Twin Tower Package
V
RRM
= 20 V - 100 V
I
F
= 200 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward
current
Surge non-repetitive
forward current, Half
Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
T
C
136 °C
Conditions
MBR20045CT (R) MBR20060CT (R) MBR20080CT (R) MBR200100CT (R) Unit
45
32
45
200
1500
-40 to 175
-40 to 175
60
42
60
200
1500
-40 to 175
-40 to 175
80
56
80
200
1500
-40 to 175
-40 to 175
100
70
100
200
1500
-40 to 175
-40 to 175
V
V
V
A
A
°C
°C
I
F,SM
T
C
= 25 °C, t
p
= 8.3 ms
T
j
T
stg
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 100 A, T
j
= 25 °C
V
R
= 20 V, T
j
= 25 °C
V
R
= 20 V, T
j
= 125 °C
MBR20045CT (R) MBR20060CT (R) MBR20080CT (R) MBR200100CT (R) Unit
0.65
5
200
0.75
5
200
0.84
5
200
0.84
5
200
V
mA
Thermal characteristics
Thermal resistance,
junction - case
R
thJC
0.5
0.5
0.5
0.5
°C/W
www.genesicsemi.com
1

MBR20060CT Related Products

MBR20060CT MBR20045CTR
Description schottky diodes & rectifiers 60v 200a schottky recovery schottky diodes & rectifiers 45v 200a schottky recovery
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker GeneSiC GeneSiC
package instruction R-PUFM-X2 R-PUFM-X2
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
application POWER POWER
Shell connection CATHODE ANODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.75 V 0.65 V
JESD-30 code R-PUFM-X2 R-PUFM-X2
Maximum non-repetitive peak forward current 1500 A 1500 A
Number of components 2 2
Phase 1 1
Number of terminals 2 2
Maximum operating temperature 175 °C 175 °C
Minimum operating temperature -40 °C -40 °C
Maximum output current 100 A 100 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Maximum repetitive peak reverse voltage 60 V 45 V
Maximum reverse current 5000 µA 5000 µA
surface mount NO NO
technology SCHOTTKY SCHOTTKY
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER

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Index Files: 2688  2102  705  1975  742  55  43  15  40  28 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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