MBR20045CT thru MBR200100CTR
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types up to 100 V V
RRM
Twin Tower Package
V
RRM
= 20 V - 100 V
I
F
= 200 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward
current
Surge non-repetitive
forward current, Half
Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
T
C
≤
136 °C
Conditions
MBR20045CT (R) MBR20060CT (R) MBR20080CT (R) MBR200100CT (R) Unit
45
32
45
200
1500
-40 to 175
-40 to 175
60
42
60
200
1500
-40 to 175
-40 to 175
80
56
80
200
1500
-40 to 175
-40 to 175
100
70
100
200
1500
-40 to 175
-40 to 175
V
V
V
A
A
°C
°C
I
F,SM
T
C
= 25 °C, t
p
= 8.3 ms
T
j
T
stg
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 100 A, T
j
= 25 °C
V
R
= 20 V, T
j
= 25 °C
V
R
= 20 V, T
j
= 125 °C
MBR20045CT (R) MBR20060CT (R) MBR20080CT (R) MBR200100CT (R) Unit
0.65
5
200
0.75
5
200
0.84
5
200
0.84
5
200
V
mA
Thermal characteristics
Thermal resistance,
junction - case
R
thJC
0.5
0.5
0.5
0.5
°C/W
www.genesicsemi.com
1
MBR20045CT thru MBR200100CTR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
http://www.genesicsemi.com/index.php/silicon-products/schottky
3