BSZ340N08NS3 G
OptiMOS
Features
TM
3 Power-Transistor
Product Summary
V
DS
R
DS(on),max
I
D
80
34
23
V
mW
A
• Ideal for high frequency switching
• Optimized technology for DC/DC converters
• Excellent gate charge x
R
DS(on)
product (FOM)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC
1)
for target applications
• Halogen-free according to IEC61249-2-21
Type
BSZ340N08NS3 G
Package
Marking
PG-TSDSON-8
340N08N
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=10 V,
T
A
=25 °C,
R
thJA
=60 K/W
2)
Pulsed drain current
3)
Avalanche energy, single pulse
4)
Gate source voltage
1)
2)
Value
23
15
Unit
A
6
92
20
±20
mJ
V
I
D,pulse
E
AS
V
GS
T
C
=25 °C
I
D
=12 A,
R
GS
=25
W
J-STD20 and JESD22
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
Rev. 2.3
page 1
2013-02-06
BSZ340N08NS3 G
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Power dissipation
Symbol Conditions
P
tot
T
C
=25 °C
T
A
=25 °C,
R
thJA
=60 K/W
2)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j
,
T
stg
Value
32
2.1
-55 ... 150
55/150/56
°C
Unit
W
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R
thJC
R
thJA
minimal footprint
6 cm
2
cooling area
2)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=12 µA
V
DS
=80 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=80 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=12 A
V
GS
=6 V,
I
D
=6 A
Gate resistance
Transconductance
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=12 A
80
2
-
-
2.8
0.1
-
3.5
5
µA
V
-
-
-
-
-
-
3.9
-
60
K/W
-
-
-
-
-
8
10
10
27
38
1
16
100
100
34
66
-
-
W
S
nA
mW
Rev. 2.3
page 2
2013-02-06
BSZ340N08NS3 G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
5)
Values
typ.
max.
Unit
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=40 V,
V
GS
=10 V,
I
D
=12 A,
R
G,ext
=1.6
W
V
GS
=0 V,
V
DS
=40 V,
f
=1 MHz
-
-
-
-
-
-
-
470
130
7
8
3
11
2
630
170
-
-
-
-
-
pF
ns
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
V
DD
=40 V,
V
GS
=0 V
V
DD
=40 V,
I
D
=12 A,
V
GS
=0 to 10 V
-
-
-
-
-
-
-
2.4
1.3
1.5
2.6
6.8
5.2
9
-
-
-
-
9.1
-
12
nC
V
nC
I
S
I
S,pulse
V
SD
t
rr
Q
rr
-
T
C
=25 °C
-
V
GS
=0 V,
I
F
=12 A,
T
j
=25 °C
V
R
=40 V,
I
F
=12A,
di
F
/dt =100 A/µs
-
-
-
-
-
0.9
43
41
23
92
1.2
-
-
A
V
ns
nC
See figure 16 for gate charge parameter definition
Rev. 2.3
page 3
2013-02-06
BSZ340N08NS3 G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10 V
40
25
20
30
15
P
tot
[W]
20
I
D
[A]
10
5
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
10
0
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
2
1 µs
limited by on-state
resistance
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
0.5
10 µs
10
1
100 µs
1
0.2
Z
thJC
[K/W]
I
D
[A]
0.1
0.05
0.02
10
0
1 ms
0.1
0.01
single pulse
10 ms
DC
10
-1
10
-1
10
0
10
1
10
2
0.01
0
0
0
0
0
0
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 2.3
page 4
2013-02-06
BSZ340N08NS3 G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
100
10 V
9V
8V
5V
5.5 V
6V
7V
8V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
70
80
60
60
R
DS(on)
[mW]
50
I
D
[A]
7V
40
40
6V
9V
20
5.5 V
5V
4.5 V
30
10 V
0
0
1
2
3
4
5
20
0
20
40
60
80
100
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
30
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
40
25
30
20
15
g
fs
[S]
150 °C
25 °C
I
D
[A]
20
10
10
5
0
0
1
2
3
4
5
6
7
0
0
10
20
30
40
50
V
GS
[V]
I
D
[A]
Rev. 2.3
page 5
2013-02-06
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