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BYV27-200

Description
2 A, SILICON, RECTIFIER DIODE, DO-204AP
Categorysemiconductor    Discrete semiconductor   
File Size51KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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BYV27-200 Overview

2 A, SILICON, RECTIFIER DIODE, DO-204AP

BYV27-50 THRU BYV27-200
GLASS PASSIVATED FAST EFFICIENT RECTIFIER
Reverse Voltage -
50 to 200 Volts
D
TE
*
DO-204AP
Forward Current -
2.0 Amperes
FEATURES
High temperature metallurgically bonded construction
Glass passivated cavity-free junction
Superfast recovery time for high efficiency
Low forward voltage, high current capability
Capable of meeting environmental standards of
MIL-S-19500
Hermetically sealed package
Low leakage current
High surge current capability
High temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
AT
P
EN
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
0.240 (6.1)
MAX.
0.150 (3.8)
0.100 (2.5)
DIA.
1.0 (25.4)
MIN.
MECHANICAL DATA
Case:
JEDEC DO-204AP solid glass body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.02 ounce, 0.56 gram
Dimensions in inches and (millimeters)
*
Brazed-lead assembly is covered by Patent No. 3,930,306
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
BYV27-50
BYV27-100
BYV27-150 BYV27-200
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Minimum reverse breakdown voltage at 100
µA
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
L
=85°C
Peak forward surge current
10ms single half sine-wave superimposed
on rated load at T
J
=175°C
Maximum instantaneous forward
voltage at 3.0A
Maximum DC reverse current
at rated DC blocking voltage
Typical junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE 3, 4)
Operating junction and storage temperature range
T
J
=25°C
T
J
=175°C
T
A
=25°C
T
A
=165°C
V
RRM
V
RMS
V
DC
V
BR
I
(AV)
50
35
50
55
100
70
100
110
2.0
150
105
150
165
200
140
200
220
Volts
Volts
Volts
Volts
Amps
I
FSM
50.0
1.07
0.88
1.0
150.0
25.0
45.0
65.0
20.0
-65 to +175
Amps
V
F
I
R
t
rr
C
J
R
ΘJA
R
ΘJL
T
J,
T
STG
Volts
µA
ns
pF
°C/W
°C
Maximum reverse recovery time
(NOTE 1)
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to lead at 0.375” (9.5mm) lead length with both leads attached to heatsinks
(4) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length and mounted on P.C.B. with 0.5 x 0.5” (12 x 12mm) copper pads
4/98

BYV27-200 Related Products

BYV27-200 BYV27-150 BYV27-100 BYV27-50
Description 2 A, SILICON, RECTIFIER DIODE, DO-204AP 2 A, 150 V, SILICON, RECTIFIER DIODE, DO-204AP 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AP 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-204AP

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