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BYV29F-300

Description
8 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AC
CategoryDiscrete semiconductor    diode   
File Size39KB,7 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BYV29F-300 Overview

8 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AC

BYV29F-300 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.4 V
JESD-609 codee0
Maximum non-repetitive peak forward current110 A
Number of components1
Maximum operating temperature150 °C
Maximum output current8 A
Maximum repetitive peak reverse voltage300 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Isolated mounting tab
BYV29F, BYV29X series
SYMBOL
QUICK REFERENCE DATA
V
R
= 300 V/ 400 V/ 500 V
k
1
a
2
V
F
1.03 V
I
F(AV)
= 9 A
t
rr
60 ns
GENERAL DESCRIPTION
Ultra-fast epitaxial rectifier diodes intended for use in switched mode power supply output rectification, electronic
lighting ballasts and high frequency switching circuits in general.
The BYV29F series is supplied in the SOD100 package.
The BYV29X series is supplied in the SOD113 package.
PINNING
PIN
1
2
tab
DESCRIPTION
cathode (k)
anode (a)
isolated
SOD100
case
SOD113
case
1
2
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
R
I
F(AV)
I
FSM
PARAMETER
Peak repetitive reverse voltage
Continuous reverse voltage
Average forward current
2
Non-repetitive peak forward
current
Storage temperature
Operating junction temperature
CONDITIONS
BYV29F/BYV29X
T
hs
138˚C
1
MIN.
-
-
-
-
-
-40
-
-300
300
300
MAX.
-400
400
400
9
100
110
150
150
-500
500
500
UNIT
V
V
A
A
A
˚C
˚C
T
stg
T
j
square wave;
δ
= 0.5;
T
hs
90 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RRM(max)
1
T
hs
de-rating for thermal stability.
2
Neglecting switching and reverse current losses
February 1999
1
Rev 1.400

BYV29F-300 Related Products

BYV29F-300 BYV29F BYV29F-500 BYV29F-400 BYV29X-300 BYV29X BYV29X-400
Description 8 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AC 9 A, 500 V, SILICON, RECTIFIER DIODE 9 A, 400 V, SILICON, RECTIFIER DIODE Rectifier diodes ultrafast 8 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AC Rectifier diodes ultrafast
Is it Rohs certified? incompatible - incompatible incompatible incompatible - incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) - Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) - Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow - unknow unknow unknow - unknow
Configuration SINGLE - SINGLE SINGLE SINGLE - SINGLE
Diode type RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE
Maximum forward voltage (VF) 1.4 V - 1.4 V 1.4 V 1.4 V - 1.4 V
JESD-609 code e0 - e0 e0 e0 - e0
Maximum non-repetitive peak forward current 110 A - 110 A 110 A 110 A - 110 A
Number of components 1 - 1 1 1 - 1
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C - 150 °C
Maximum output current 8 A - 8 A 8 A 8 A - 8 A
Maximum repetitive peak reverse voltage 300 V - 500 V 400 V 300 V - 400 V
surface mount NO - NO NO NO - NO
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
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