Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Isolated mounting tab
BYV29F, BYV29X series
SYMBOL
QUICK REFERENCE DATA
V
R
= 300 V/ 400 V/ 500 V
k
1
a
2
V
F
≤
1.03 V
I
F(AV)
= 9 A
t
rr
≤
60 ns
GENERAL DESCRIPTION
Ultra-fast epitaxial rectifier diodes intended for use in switched mode power supply output rectification, electronic
lighting ballasts and high frequency switching circuits in general.
The BYV29F series is supplied in the SOD100 package.
The BYV29X series is supplied in the SOD113 package.
PINNING
PIN
1
2
tab
DESCRIPTION
cathode (k)
anode (a)
isolated
SOD100
case
SOD113
case
1
2
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
R
I
F(AV)
I
FSM
PARAMETER
Peak repetitive reverse voltage
Continuous reverse voltage
Average forward current
2
Non-repetitive peak forward
current
Storage temperature
Operating junction temperature
CONDITIONS
BYV29F/BYV29X
T
hs
≤
138˚C
1
MIN.
-
-
-
-
-
-40
-
-300
300
300
MAX.
-400
400
400
9
100
110
150
150
-500
500
500
UNIT
V
V
A
A
A
˚C
˚C
T
stg
T
j
square wave;
δ
= 0.5;
T
hs
≤
90 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RRM(max)
1
T
hs
de-rating for thermal stability.
2
Neglecting switching and reverse current losses
February 1999
1
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V
isol
Peak isolation voltage from
all terminals to external
heatsink
CONDITIONS
BYV29F, BYV29X series
MIN.
-
TYP. MAX. UNIT
-
1500
V
SOD100 package; R.H.
≤
65%; clean and
dustfree
V
isol
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz;
all terminals to external
sinusoidal waveform; R.H.
≤
65%; clean
heatsink
and dustfree
Capacitance from pin 2 to
external heatsink
f = 1 MHz
-
-
2500
V
C
isol
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air.
MIN.
-
-
-
TYP.
-
-
55
MAX.
5.5
7.2
-
UNIT
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
Q
s
t
rr
I
rrm
V
fr
PARAMETER
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Peak reverse recovery current
Forward recovery voltage
CONDITIONS
I
F
= 8 A; T
j
= 150˚C
I
F
= 8 A
I
F
= 20 A
V
R
= V
RRM
V
R
= V
RRM
; T
j
= 100 ˚C
I
F
= 2 A to V
R
≥
30 V;
dI
F
/dt = 20 A/µs
I
F
= 1 A to V
R
≥
30 V;
dI
F
/dt = 100 A/µs
I
F
= 10 A to V
R
≥
30 V;
dI
F
/dt = 50 A/µs; T
j
= 100˚C
I
F
= 10 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
-
TYP.
0.90
1.05
1.20
2.0
0.1
40
50
4.0
2.5
MAX.
1.03
1.25
1.40
50
0.35
60
60
5.5
-
UNIT
V
V
V
µA
mA
nC
ns
A
V
February 1999
2
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29F, BYV29X series
I
dI
F
dt
F
12
10
PF / W
Vo = 0.89V
Rs = 0.019 Ohms
BYV29
Ths(max) / C
a = 1.57
1.9
84
95
106
117
128
139
t
2.2
rr
time
8
4
6
4
2.8
Q
I
R
I
s
10%
100%
2
0
rrm
0
2
4
IF(AV) / A
6
8
150
10
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
trr / ns
I
F
1000
IF=10 A
100
time
VF
V
VF
time
fr
1
1
10
Tj = 25 C
Tj = 100C
1A
10
dIF/dt (A/us)
100
Fig.2. Definition of V
fr
Fig.5. Maximum t
rr
at T
j
= 25˚C and 100˚C
15
PF / W
Vo = 0.8900 V
Rs = 0.0190 Ohms
BYV29
Ths(max) / C
D = 1.0
67.5
10
Irrm / A
IF=10A
0.5
10
0.2
0.1
5
t
p
D=
T
t
95
1
IF=1A
I
t
p
122.5
0.1
T
0
0
5
IF(AV) / A
10
150
15
0.01
1
Tj = 25 C
Tj = 100C
10
-dIF/dt (A/us)
100
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
);
square wave where I
F(AV)
=I
F(RMS)
x
√
D.
Fig.6. Maximum I
rrm
at T
j
= 25˚C and 100˚C.
February 1999
3
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29F, BYV29X series
30
IF / A
Tj=150 C
Tj=25 C
BYW29
10
Transient thermal impedance, Zth j-hs (K/W)
1
20
0.1
typ
10
max
0.01
P
D
t
p
D=
t
p
T
t
0
0
0.5
1
VF / V
1.5
2
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV29F
10s
Fig.7. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Qs / nC
Fig.9. Transient thermal impedance Z
th j-hs
= f(t
p
)
1000
100
IF = 10 A
2A
10
1
1.0
10
-dIF/dt (A/us)
100
Fig.8. Maximum Q
s
at T
j
= 25˚C
February 1999
4
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
BYV29F, BYV29X series
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
7.9
7.5
17
max
seating
plane
3.5 max
not tinned
4.4
13.5
min
k
0.4
M
a
0.9
0.7
0.55 max
1.3
5.08
top view
Fig.10. SOD100; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
February 1999
5
Rev 1.400
FPGA/CPLD
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