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XN04111

Description
Composite Device - Composite Transistors
CategoryDiscrete semiconductor    The transistor   
File Size65KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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XN04111 Overview

Composite Device - Composite Transistors

XN04111 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
Parts packaging codeSC-74
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)35
JESD-30 codeR-PDSO-G6
JESD-609 codee6
Humidity sensitivity level1
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Bismuth (Sn/Bi)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Composite Transistors
XN04111
(XN4111)
Silicon PNP epitaxial planar type
Unit: mm
For switching/digital circuits
Features
Two elements incorporated into one package
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half
4
2.90
+0.20
–0.05
1.9
±0.1
(0.95) (0.95)
5
6
0.16
+0.10
–0.06
1.50
+0.25
–0.05
2.8
+0.2
–0.3
3
2
1
0.30
+0.10
–0.05
Basic Part Number
UNR2111 (UN2111)
×
2
0.50
+0.10
–0.05
10˚
1.1
+0.2
–0.1
(0.65)
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
−50
−50
−100
300
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ : SC-74
0 to 0.1
Marking Symbol: 9U
Internal Connection
4
Tr2
Tr1
5
6
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
R
1
R
1
/ R
2
f
T
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
EB
= −6
V, I
C
=
0
V
CE
= −10
V, I
C
= −5
mA
I
C
= −10
mA, I
B
= −
0.3 mA
V
CC
= −5
V, V
B
= −
0.5 V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −2.5
V, R
L
=
1 kΩ
3
2
1.1
+0.3
–0.1
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
1
Min
−50
−50
Typ
Max
Unit
V
V
0.1
0.5
0.5
35
0.25
−4.9
0.2
−30%
0.8
10
1.0
80
+30%
1.2
µA
µA
mA
V
V
V
kΩ
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) The part number in the parenthesis shows conventional part number.
Publication date: June 2003
SJJ00044BED
0.4
±0.2
1

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