Supertex inc.
N-Channel Enhancement-Mode
Vertical DMOS FETs
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VN2224
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
General Description
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Applications
The Supertex VN2224 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Device
VN2224
Package
TO-92
VN2224N3-G
NW
(Die in wafer form)
Wafer / Die Options
NJ
(Die on adhesive tape)
ND
(Die in waffle pack)
VN5224NW
VN5224NJ
VN5224ND
For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specification VF52 for layout and dimensions.
Product Summary
Device
VN2224N3-G
BV
DSS
/BV
DGS
(V)
Pin Configuration
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
240
1.25
5.0
SOURCE
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
TO-92 (N3)
GATE
Product Marking
S i VN
222 4
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
Package may or may not include the following marks: Si or
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
VN2224
Thermal Characteristics
Package
TO-92
(continuous)
(A)
I
D
†
(pulsed)
(A)
I
D
Power Dissipation
@T
C
= 25
O
C
(W)
( C/W)
O
θ
JC
( C/W)
O
θ
JA
I
DR
†
(A)
I
DRM
(A)
0.54
5.0
1.0
125
170
0.54
5.0
Notes:
† I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(T = 25°C unless otherwise specified)
A
Sym
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
d(OFF)
t
r
t
f
V
SD
t
rr
Parameter
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate body leakage current
Zero gate voltage drain current
Min
240
1.0
-
-
-
-
2.0
5.0
-
-
-
1000
-
-
-
-
-
-
-
-
-
Typ
-
-
-4.0
1.0
-
-
-
10
1.0
0.9
1.0
2200
300
85
20
6.0
65
16
30
0.8
500
Max
-
3.0
-5.0
100
50
5.0
-
-
1.5
1.25
1.4
-
350
150
35
15
90
25
60
1.0
-
Units
V
V
mV/
O
C
nA
µA
mA
A
Ω
%/
O
C
mmho
pF
Conditions
V
GS
= 0V, I
D
= 5.0mA
V
GS
= V
DS
, I
D
= 5.0mA
V
GS
= V
DS
, I
D
= 5.0mA
V
GS
= ±20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125
O
C
V
GS
= 5.0V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 5.0V, I
D
= 2.0A
V
GS
= 10V, I
D
= 2.0A
V
GS
= 10V, I
D
= 2.0A
V
DS
= 25V, I
D
= 2.0A
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
V
DD
= 25V,
I
D
= 2.0A,
R
GEN
= 10Ω
V
GS
= 0V, I
SD
= 100mA
V
GS
= 0V, I
SD
= 1.0A
On-state drain current
Static drain-to-source on-state resistance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common Source output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-off delay time
Rise time
Fall time
Diode forward voltage drop
Reverse recovery time
ns
V
ns
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90%
10%
t
(ON)
V
DD
Pulse
Generator
R
L
OUTPUT
INPUT
0V
t
(OFF)
t
r
t
d(OFF)
t
f
10%
90%
90%
R
GEN
t
d(ON)
VDD
OUTPUT
0V
10%
INPUT
D.U.T.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
2
Tel: 408-222-8888
www.supertex.com
VN2224
Typical Performance Curves
10
Output Characteristics
V
GS
= 10V
8V
6V
10
Saturation Characteristics
8
8
V
GS
= 10V
8V
I
D
(amperes)
6
I
D
(amperes)
6V
6
4
4V
4
4V
2
3V
2
3V
0
0
10
20
V
DS
(volts)
30
40
50
0
0
2
4
V
DS
(volts)
6
8
10
5
Transconductance vs. Drain Current
V
DS
= 25V
2.0
Power Dissipation vs. Case Temperature
4
G
FS
(siemens)
P
D
(watts)
T
A
= 125
O
C
3
T
A
= -55
O
C
1.0
TO-92
2
T
A
= 25
O
C
1
0
0
I
D
(amperes)
Maximum Rated Safe Operating Area
5
10
0
0
25
50
75
100
125
150
T
C
( C)
O
10
1.0
Thermal Response Characteristics
Thermal Resistance (normalized)
1
0.8
I
D
(amperes)
0.6
0.1
TO-92 (DC)
0.01
0.4
0.2
TO-92
T
C
= 25
O
C
P
D
= 1.0W
0.001
T
C
= 25
O
C
1
10
100
1000
0
0.001
0.01
V
DS
(volts)
t
P
(seconds)
0.1
1
10
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
3
Tel: 408-222-8888
www.supertex.com
VN2224
Typical Performance Curves
(cont.)
BV
DSS
Variation with Temperature
1.1
4.0
5.0
On-Resistance vs. Drain Current
V
GS
= 5.0V
BV
DSS
(normalized)
R
DS(ON)
(ohms)
3.0
1.0
2.0
1.0
0.9
-50
0
50
100
150
0
0
2.0
4.0
6.0
V
GS
= 10V
T
j
(
O
C)
I
D
(amperes)
8.0
10
10
Transfer Characteristics
V
DS
= 25
O
C
1.4
V
GS
and RV
DS
Variation with Temperature
2.4
8.0
1.2
I
D
(amperes)
6.0
T
A
= -55
O
C
125
O
C
4.0
1.0
1.6
0.8
1.2
2.0
0.6
0.8
R
DS(ON)
@ 10V, 2.0A
0.4
150
0
0
2.0
4.0
6.0
8.0
10
V
GS
(volts)
0.4
-50
0
50
100
T
j
(
O
C)
10
400
Capacitance vs. Drain-to-Source Voltage
f = 1.0MHz
Gate Drive Dynamic Characteristics
V
DS
= 10V
8.0
300
C
ISS
C (picofarads)
200
V
GS
(volts)
6.0
V
DS
= 40V
4.0
733 pF
100
C
OSS
C
RSS
2.0
300 pF
40
0
0
2.0
4.0
6.0
8.0
10
0
0
10
20
30
V
DS
(volt)
Q
G
(nanocoulombs)
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
4
Tel: 408-222-8888
www.supertex.com
R
DS(ON)
(normalized)
V
GS(th)
(normalized)
25
O
C
V
GS(th)
@ 5.0mA
2.0
VN2224
3-Lead TO-92 Package Outline (N3)
D
Seating
Plane
A
1
2
3
L
e1
e
b
c
Front View
Side View
E1
E
1
2
3
Bottom View
Symbol
Dimensions
(inches)
MIN
NOM
MAX
A
.170
-
.210
b
.014
†
-
.022
†
c
.014
†
-
.022
†
D
.175
-
.205
E
.125
-
.165
E1
.080
-
.105
e
.095
-
.105
e1
.045
-
.055
L
.500
-
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO92N3, Version E041009.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html.)
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
(website: http//www.supertex.com)
©2011
Supertex inc.
All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-VN2224
B031411
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
5
Supertex inc.
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