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VN2224N3-G P002

Description
mosfet N-CH enhancmnt mode mosfet
Categorysemiconductor    Discrete semiconductor   
File Size532KB,5 Pages
ManufacturerSupertex
Environmental Compliance
Download Datasheet Parametric Compare View All

VN2224N3-G P002 Overview

mosfet N-CH enhancmnt mode mosfet

VN2224N3-G P002 Parametric

Parameter NameAttribute value
ManufactureSupertex
Product CategoryMOSFET
RoHSYes
Transistor PolarityN-Channel
PackagingReel
Channel ModeEnhanceme
Factory Pack Quantity2000
Supertex inc.
N-Channel Enhancement-Mode
Vertical DMOS FETs
VN2224
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
General Description
Applications
The Supertex VN2224 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Device
VN2224
Package
TO-92
VN2224N3-G
NW
(Die in wafer form)
Wafer / Die Options
NJ
(Die on adhesive tape)
ND
(Die in waffle pack)
VN5224NW
VN5224NJ
VN5224ND
For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specification VF52 for layout and dimensions.
Product Summary
Device
VN2224N3-G
BV
DSS
/BV
DGS
(V)
Pin Configuration
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
240
1.25
5.0
SOURCE
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
TO-92 (N3)
GATE
Product Marking
S i VN
222 4
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
Package may or may not include the following marks: Si or
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com

VN2224N3-G P002 Related Products

VN2224N3-G P002 VN2224N3-G P014 VN2224N3-G P003 VN2224N3-G P013 VN2224N3-G P005
Description mosfet N-CH enhancmnt mode mosfet mosfet N-CH enhancmnt mode mosfet mosfet N-CH enhancmnt mode mosfet mosfet N-CH enhancmnt mode mosfet mosfet N-CH enhancmnt mode mosfet
Manufacture Supertex Supertex Supertex Supertex Supertex
Product Category MOSFET MOSFET MOSFET MOSFET MOSFET
RoHS Yes Yes Yes Yes Yes
Transistor Polarity N-Channel N-Channel N-Channel N-Channel N-Channel
Packaging Reel Reel Reel Reel Reel
Channel Mode Enhanceme Enhanceme Enhanceme Enhanceme Enhanceme
Factory Pack Quantity 2000 2000 2000 2000 2000
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