BYV34-500 datasheet, PDF - EEWORLD Datasheet

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BYV34-500: Description10 A, 500 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size36KB，5 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/; Environmental Compliance

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BYV34-500 Overview

10 A, 500 V, SILICON, RECTIFIER DIODE

BYV34-500 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code	unknow
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.4 V
JESD-609 code	e3
Maximum non-repetitive peak forward current	150 A
Maximum operating temperature	150 °C
Maximum output current	17 A
Maximum repetitive peak reverse voltage	500 V
Maximum reverse recovery time	0.05 µs
surface mount	NO
Terminal surface	Matte Tin (Sn)

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Philips Semiconductors

Product specification

Dual rectifier diodes

ultrafast

FEATURES

• Low forward volt drop

• Fast switching

• Soft recovery characteristic

• High thermal cycling performance

• Low thermal resistance

BYV34 series

SYMBOL

QUICK REFERENCE DATA

= 300 V/ 400 V/ 500 V

k 2

≤

1.05 V

O(AV)

= 20 A

≤

60 ns

SOT78 (TO220AB)

GENERAL DESCRIPTION

Dual, common cathode, ultra-fast,

epitaxial rectifier diodes intended

for use as output rectifiers in high

frequency switched mode power

supplies.

The BYV34 series is supplied in the

conventional

leaded

SOT78

(TO220AB) package.

PINNING

tab

DESCRIPTION

anode 1

cathode

anode 2

cathode

tab

1 23

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

RRM

RWM

O(AV)

FRM

FSM

PARAMETER

Peak repetitive reverse voltage

Crest working reverse voltage

Continuous reverse voltage

Average rectified output current

(both diodes conducting)

Repetitive peak forward current

per diode

Non-repetitive peak forward

current per diode.

Storage temperature

Operating junction temperature

CONDITIONS

BYV34

≤

138˚C

square wave;

= 0.5;

≤

115 ˚C

t = 25

µs; δ

= 0.5;

≤

115 ˚C

t = 10 ms

t = 8.3 ms

sinusoidal; with reapplied

RRM(max)

-40

MIN.

-300

300

MAX.

-400

400

120

132

150

-500

500

UNIT

˚C

stg

THERMAL RESISTANCES

SYMBOL

th j-hs

th j-a

PARAMETER

Thermal resistance junction to

heatsink

Thermal resistance junction to

ambient

CONDITIONS

per diode

both diodes conducting

in free air.

MIN.

TYP.

MAX.

2.4

1.6

UNIT

K/W

Neglecting switching and reverse current losses

October 1998

Rev 1.400

BYV34-500 Related Products

	BYV34-500	BYV34
Description	10 A, 500 V, SILICON, RECTIFIER DIODE	10 A, 500 V, SILICON, RECTIFIER DIODE

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