Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
GENERAL DESCRIPTION
Glass passivated, high efficiency
rectifier diodes in a plastic envelope
featuring low forward voltage drop,
ultra fast reverse recovery times and
soft recovery characteristic. They are
intended for use in switched mode
power supplies and high frequency
circuits in general, where both low
conduction losses and low switching
losses are essential.
BYV74 series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
O(AV)
t
rr
PARAMETER
BYV74-
Repetitive peak reverse
voltage
Forward voltage
Average output current
(both diodes conducting)
Reverse recovery time
MAX.
300
300
1.12
30
60
MAX.
400
400
1.12
30
60
MAX.
500
500
1.12
30
60
UNIT
V
V
A
ns
PINNING - SOT93
PIN
1
2
3
tab
DESCRIPTION
Anode 1 (a)
Cathode (k)
Anode 2 (a)
Cathode (k)
PIN CONFIGURATION
tab
SYMBOL
a1
1
k2
1
2
3
a2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
PARAMETER
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-40
-
-300
300
300
300
MAX.
-400
400
400
400
30
27
43
30
150
160
112
150
150
-500
500
500
500
UNIT
V
V
V
A
A
A
A
A
A
A
2
s
˚C
˚C
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
T
mb
≤
136˚C
Average output current (both
diodes conducting)
1
RMS output current (both
diodes conducting)
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode.
I
2
t for fusing
Storage temperature
Operating junction temperature
square wave;
δ
= 0.5;
T
mb
≤
94 ˚C
sinusoidal; a = 1.57;
T
mb
≤
98 ˚C
t = 25
µs; δ
= 0.5;
T
mb
≤
94 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RRM(max)
t = 10 ms
I
O(RMS)
I
FRM
I
FSM
I
2
t
T
stg
T
j
1
Neglecting switching and reverse current losses.
For output currents in excess of 20 A, connection should be made to the exposed metal mounting base.
August 1996
1
Rev 1.200
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes conducting
in free air.
MIN.
-
-
-
BYV74 series
TYP.
-
-
45
MAX.
2.4
1.4
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
PARAMETER
Forward voltage (per diode)
Reverse current (per diode)
CONDITIONS
I
F
= 15 A; T
j
= 150˚C
I
F
= 15 A
I
F
= 30 A
V
R
= V
RRM
V
R
= V
RRM
; T
j
= 100 ˚C
MIN.
-
-
-
-
-
TYP.
0.95
1.08
1.15
10
0.3
MAX.
1.12
1.25
1.36
50
0.8
UNIT
V
V
V
µA
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
Q
s
t
rr
I
rrm
V
fr
PARAMETER
Reverse recovery charge (per
diode)
Reverse recovery time (per
diode)
Peak reverse recovery current
(per diode)
Forward recovery voltage (per
diode)
CONDITIONS
I
F
= 2 A to V
R
≥
30 V;
dI
F
/dt = 20 A/µs
I
F
= 1 A to V
R
≥
30 V;
dI
F
/dt = 100 A/µs
I
F
= 10 A to V
R
≥
30 V;
dI
F
/dt = 50 A/µs; T
j
= 100˚C
I
F
= 10 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
TYP.
40
50
4.2
2.5
MAX.
60
60
5.2
-
UNIT
nC
ns
A
V
August 1996
2
Rev 1.200
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
BYV74 series
I
dI
F
dt
F
20
PF / W
Vo = 0.89
Rs = 0.0137
BYV44
Tmb(max) / C
102
a = 1.57
1.9
2.2
114
t
15
2.8
4
rr
time
10
126
Q
I
R
I
s
10%
100%
5
138
rrm
0
0
5
IF(AV) / A
10
150
15
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
trr / ns
I
F
1000
IF=20 A
100
time
V
F
V
V
F
time
1A
10
fr
1
1
Tj = 25 C
Tj = 100 C
10
dIF/dt (A/us)
100
Fig.2. Definition of V
fr
Fig.5. Maximum t
rr
at T
j
= 25˚C and 100˚C; per diode
30
25
20
15
10
5
PF / W
Vo = 0.8900 V
Rs = 0.0137 Ohms
BYV44
Tmb(max) / C
88
D = 1.0
90
0.5
10
Irrm / A
IF= 20 A
102
114
t
p
T
t
1
IF=1A
0.2
0.1
I
t
p
D=
126
138
0.1
Tj = 25 C
Tj = 100 C
0.01
1
10
-dIF/dt (A/us)
100
T
0
0
5
10
15
IF(AV) / A
20
150
25
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square wave where I
F(AV)
=I
F(RMS)
x
√
D.
Fig.6. Maximum I
rrm
at T
j
= 25˚C and 100˚C; per
diode
August 1996
3
Rev 1.200
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
BYV74 series
15.2
max
14
13.6
2 max
4.25
4.15
4.6
max
2
4.4
21
max
12.7
max
2.2 max
dimensions within
this zone are
uncontrolled
1
5.5
11
Fig.10. SOT93; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT93 envelope.
2. Epoxy meets UL94 V0 at 1/8".
0.5
min
13.6
min
2
3
1.15
0.95
0.5
M
1.6
0.4
August 1996
5
Rev 1.200
Embedded System
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