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BSB015N04NX3 G

Description
mosfet optimos3 pwr-mosfet N-CH
Categorysemiconductor    Discrete semiconductor   
File Size1MB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BSB015N04NX3 G Overview

mosfet optimos3 pwr-mosfet N-CH

BSB015N04NX3 G Parametric

Parameter NameAttribute value
ManufactureInfine
Product CategoryMOSFET
RoHSYes
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage40 V
Vgs - Gate-Source Breakdown Voltage20 V
Id - Continuous Drain Curre35 A
Rds On - Drain-Source Resistance1.5 mOhms
ConfiguratiSingle Quad Drain Triple Source
Maximum Operating Temperature+ 150 C
Pd - Power Dissipati2.8 W
Mounting StyleSMD/SMT
Package / CaseWDSON-5
PackagingReel
Channel ModeEnhanceme
Fall Time7.6 ns
Minimum Operating Temperature- 40 C
Rise Time6.4 ns
Factory Pack Quantity5000
Typical Turn-Off Delay Time36 ns
n-Channel Power MOSFET
OptiMOS™
BSB015N04NX3 G
Data Sheet
2.4, 2011-05-24
Final
Industrial & Multimarket

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