LS4148/LS4448/LS914B
500mW High Speed SMD Switching Diode
Small Signal Diode
QUADRO Mini-MELF (LS34)
HERMETICALLY SEALED GLASS
C
Features
Fast switching device(T
rr
<4.0nS)
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
All External Surfaces are Corrosion Resistant and
Leads are Readily Solderable
A
B
E
D
Mechanical Data
Case : QUADRO Mini-MELF Package (JEDEC DO-213)
High temperature soldering guaranteed : 270°C/10s
Polarity : Indicated by cathode band
Weight : 29 ± 2.5 mg
Dimensions
A
B
C
D
E
Unit (mm)
Min
3.30
1.40
0.25
1.25
Max
3.70
1.60
0.40
1.40
Unit (inch)
Min
Max
0.130 0.146
0.055 0.063
0.010 0.016
0.049 0.055
0.071
1.80
Ordering Information
Part No.
LSxxxx L1
LSxxxx L0
Package
QUADRO Mini-MELF
QUADRO Mini-MELF
Packing
2.5Kpcs / 7" Reel
10Kpcs / 13" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Peak Forward Surge Current
Non-Repetitive Peak Forward Current
Mean Forward Current
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
Symbol
P
D
V
RSM
V
RRM
I
FSM
I
FM
I
O
RθJA
T
J
, T
STG
Value
500
100
75
2
450
150
300
-65 to + 200
Units
mW
V
V
A
mA
mA
°C/W
°C
Electrical Characteristics
Type Number
Reverse Breakdown Voltage
Forward Voltage
LS4448, LS914B
LS4148
LS4448, LS914B
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time (Note 2)
I
F
=5.0mA
I
F
=10.0mA
I
F
=100.0mA
V
R
=20V
V
R
=75V
V
R
=0, f=1.0MHz
I
R
C
J
Trr
V
F
0.62
-
-
-
-
-
-
0.72
1.0
1.0
25
5.0
4.0
4.0
nA
μA
pF
ns
V
I
R
=100uA
I
R
=5uA
Symbol
V
(BR)
Min
100
75
Max
-
-
Units
V
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Reverse Recovery Test Conditions: I
F
=I
R
=10mA, R
L
=100Ω, I
RR
=1mA
Version : C09
LS4148/LS4448/LS914B
500mW High Speed SMD Switching Diode
Small Signal Diode
Rating and Sharacteristic Curves
FIG 1 Typical Forward Characteristics
100
FIG 2 Reverse Current vs Reverse Voltage
100
Instantaneous Forward Current
(A)
Reverse Current (uA)
10
1
10
Ta=25°C
1
Ta=25°C
0.1
0.01
0.1
0.001
0
0.2
Instantaneous Forward Volatge (V)
0.4
0.6
0.8
1
1.2
1.4
1.6
0.01
0
20
Reverse Volatge (V)
40
60
80
100
120
FIG 3 Admissible Power Dissipation Curve
500
1.5
FIG 4 Typical Junction Capacitance
Junction Capacitance (pF)
0
25
50
75
100
125
150
175
200
Power Dissipation (mW)
400
300
200
100
0
1.2
0.9
0.6
0.3
0
0
5
10
15
20
25
30
Ambient Temperature (°C)
Reverse Voltage (V)
FIG 5 Forward Resistance vs. Forward Current
10000
Dynamic Forward Resistance (Ώ)
1000
100
10
1
0
0
Forward Current (mA)
1
10
100
Version : C09
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