MRF6S19100HR3 datasheet, PDF - EEWORLD Datasheet

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MRF6S19100HR3: Descriptiontransistors RF mosfet hv6 wcdma 22w ni780h; Categorysemiconductor Discrete semiconductor; File Size402KB，11 Pages; ManufacturerFREESCALE (NXP); Environmental Compliance

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transistors RF mosfet hv6 wcdma 22w ni780h

MRF6S19100HR3 Parametric

Parameter Name	Attribute value
Manufacture	Freescale Semiconduc
Product Category	Transistors RF MOSFET
RoHS	Yes
Configurati	Single
Transistor Polarity	N-Channel
Frequency	1.93 GHz to 1.99 GHz
Gai	16.1 dB
Output Powe	22 W
Vds - Drain-Source Breakdown Voltage	68 V
Vgs - Gate-Source Breakdown Voltage	- 0.5 V, + 12 V
Maximum Operating Temperature	+ 150 C
Mounting Style	SMD/SMT
Package / Case	NI-780-3
Packaging	Reel
Minimum Operating Temperature	- 65 C
Pd - Power Dissipati	398 W
Factory Pack Quantity	250
Vgs th - Gate-Source Threshold Voltage	3 V
Unit Weigh	6.425 g

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Freescale Semiconductor

Technical Data

Document Number: MRF6S19100H

Rev. 5, 12/2008

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

Designed for N - CDMA base station applications with frequencies from 1930

to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

applications.

•

Typical 2 - Carrier N - CDMA Performance: V

= 28 Volts, I

= 900 mA,

out

= 22 Watts Avg., f = 1987 MHz, IS - 95 (Pilot, Sync, Paging, Traffic

Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB

@ 0.01% Probability on CCDF.

Power Gain — 16.1 dB

Drain Efficiency — 28%

IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth

ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth

•

Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW

Output Power

Features

•

Characterized with Series Equivalent Large - Signal Impedance Parameters

•

Internally Matched for Ease of Use

•

Qualified Up to a Maximum of 32 V

Operation

•

Integrated ESD Protection

•

Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

•

RoHS Compliant

•

In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MRF6S19100HR3

MRF6S19100HSR3

1930- 1990 MHz, 22 W AVG., 28 V

2 x N - CDMA

LATERAL N - CHANNEL

RF POWER MOSFETs

CASE 465 - 06, STYLE 1

NI - 780

MRF6S19100HR3

CASE 465A - 06, STYLE 1

NI - 780S

MRF6S19100HSR3

Table 1. Maximum Ratings

Rating

Drain - Source Voltage

Gate - Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

(1,2)

Symbol

DSS

stg

Value

- 0.5, +68

- 0.5, +12

- 65 to +150

150

225

Unit

Vdc

°C

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Case Temperature 80°C, 100 W CW

Case Temperature 77°C, 22 W CW

Symbol

θJC

Value

(2,3)

0.44

0.50

Unit

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6S19100HR3 MRF6S19100HSR3

RF Device Data

Freescale Semiconductor

MRF6S19100HR3 Related Products

	MRF6S19100HR3	MRF6S19100HSR3	MRF6S19100HR5
Description	transistors RF mosfet hv6 wcdma 22w ni780h	mosfet RF N-chan 28v 22w NI-780s	mosfet RF N-chan 28v 22w NI-780
Frequency	1.93 GHz to 1.99 GHz	1.99GHz	1.99GHz
Gai	16.1 dB	16.1dB	16.1dB
Package / Case	NI-780-3	NI-780S	NI-780
Packaging	Reel	Tape & Reel (TR)	Tape & Reel (TR)
Standard Package	-	250	50
Category	-	Discrete Semiconductor Products	Discrete Semiconductor Products
Family	-	RF FETs	RF FETs
Transistor Type	-	LDMOS	LDMOS
Voltage - Tes	-	28V	28V
Current Rating	-	10µA	10µA
Current - Tes	-	900mA	900mA
Power - Outpu	-	22W	22W
Voltage - Rated	-	68V	68V
Supplier Device Package	-	NI-780S	NI-780

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