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MRF6S19100HSR3

Description
mosfet RF N-chan 28v 22w NI-780s
Categorysemiconductor    Discrete semiconductor   
File Size402KB,11 Pages
ManufacturerFREESCALE (NXP)
Environmental Compliance  
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mosfet RF N-chan 28v 22w NI-780s

MRF6S19100HSR3 Parametric

Parameter NameAttribute value
Datasheets
MRF6S19100H
PCN Obsolescence/ EOL
RF Devices 01/Jul/2010
Standard Package250
CategoryDiscrete Semiconductor Products
FamilyRF FETs
PackagingTape & Reel (TR)
Transistor TypeLDMOS
Frequency1.99GHz
Gai16.1dB
Voltage - Tes28V
Current Rating10µA
Noise Figure-
Current - Tes900mA
Power - Outpu22W
Voltage - Rated68V
Package / CaseNI-780S
Supplier Device PackageNI-780S
Freescale Semiconductor
Technical Data
Document Number: MRF6S19100H
Rev. 5, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
Typical 2 - Carrier N - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 900 mA,
P
out
= 22 Watts Avg., f = 1987 MHz, IS - 95 (Pilot, Sync, Paging, Traffic
Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB
@ 0.01% Probability on CCDF.
Power Gain — 16.1 dB
Drain Efficiency — 28%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S19100HR3
MRF6S19100HSR3
1930- 1990 MHz, 22 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S19100HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S19100HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 77°C, 22 W CW
Symbol
R
θJC
Value
(2,3)
0.44
0.50
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2004 - 2006, 2008. All rights reserved.
MRF6S19100HR3 MRF6S19100HSR3
1
RF Device Data
Freescale Semiconductor

MRF6S19100HSR3 Related Products

MRF6S19100HSR3 MRF6S19100HR3 MRF6S19100HR5
Description mosfet RF N-chan 28v 22w NI-780s transistors RF mosfet hv6 wcdma 22w ni780h mosfet RF N-chan 28v 22w NI-780
Packaging Tape & Reel (TR) Reel Tape & Reel (TR)
Frequency 1.99GHz 1.93 GHz to 1.99 GHz 1.99GHz
Gai 16.1dB 16.1 dB 16.1dB
Package / Case NI-780S NI-780-3 NI-780
Standard Package 250 - 50
Category Discrete Semiconductor Products - Discrete Semiconductor Products
Family RF FETs - RF FETs
Transistor Type LDMOS - LDMOS
Voltage - Tes 28V - 28V
Current Rating 10µA - 10µA
Current - Tes 900mA - 900mA
Power - Outpu 22W - 22W
Voltage - Rated 68V - 68V
Supplier Device Package NI-780S - NI-780
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