Freescale Semiconductor
Technical Data
Document Number: MRF5S9080N
Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier
amplifier applications.
GSM Application
•
Typical GSM Performance: V
DD
= 26 Volts, I
DQ
= 600 mA, P
out
= 80 Watts
CW, Full Frequency Band (869 - 894 MHz or 921 - 960 MHz).
Power Gain — 18.5 dB
Drain Efficiency — 60%
GSM EDGE Application
•
Typical GSM EDGE Performance: V
DD
= 26 Volts, I
DQ
= 550 mA,
P
out
= 36 Watts Avg., Full Frequency Band (869 - 894 MHz or
921 - 960 MHz).
Power Gain — 19 dB
Drain Efficiency — 42%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 2.5% rms
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 80 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
200_C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
T
stg
T
J
MRF5S9080NR1
MRF5S9080NBR1
869 - 960 MHz, 80 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S9080NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S9080NBR1
Value
- 0.5, +65
- 0.5, +15
- 65 to +150
200
Unit
Vdc
Vdc
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 79°C, 80 W CW
Case Temperature 80°C, 36 W CW
Symbol
R
θJC
Value
(1,2)
0.50
0.54
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF5S9080NR1 MRF5S9080NBR1
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1B (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 400
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 600 mAdc, Measured in Functional Test)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
=
26
Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Power Gain
Drain Efficiency
Input Return Loss
P
out
@ 1 dB Compression Point
C
rss
C
oss
—
—
1.8
600
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
2
3.5
—
2.8
3.9
0.27
3.5
4.5
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
500
μAdc
μAdc
nAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ
= 600 mA, P
out
= 80 W CW, f = 960 MHz
G
ps
η
D
IRL
P1dB
17
55
—
80
18.5
60
- 15
90
20
—
-9
—
dB
%
dB
W
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ
= 550 mA, P
out
= 36 W Avg.,
869- 894 MHz, 920 - 960 MHz GSM EDGE Modulation
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
1. Part is internally matched on input.
G
ps
η
D
EVM
SR1
SR2
—
—
—
—
—
19
42
2.5
- 63
- 77
—
—
—
—
—
dB
%
% rms
dBc
dBc
MRF5S9080NR1 MRF5S9080NBR1
2
RF Device Data
Freescale Semiconductor
R1
V
BIAS
C1
R2
C4
C7
Z12
Z6
C8
C5
C2
+
C21
V
SUPPLY
R3
RF
INPUT
C16
Z7
C18
Z8
Z9
Z10
C11
Z11
RF
OUTPUT
Z1
Z2
C10
C12
Z3
Z4
Z5
C15
DUT
C17
C19
C20
C13
C14
Z13
C9
C6
C3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
1.220″ x 0.087″ Microstrip
1.110″ x 0.087″ Microstrip
0.536″ x 0.087″ Microstrip
0.310″ x 0.087″ Microstrip
0.430″ x 0.591″ Microstrip
1.567″ x 0.059″ Microstrip
0.734″ x 0.788″ Microstrip
Z8
Z9
Z10
Z11
Z12, Z13
PCB
0.138″ x 0.087″ Microstrip
0.411″ x 0.087″ Microstrip
0.403″ x 0.087″ Microstrip
0.560″ x 0.087″ Microstrip
1.693″ x 0.087″ Microstrip
Taconic TLX8 - 0300, 0.030″,
ε
r
= 2.55
Figure 1. MRF5S9080NR1(NBR1) Test Circuit Schematic — 900 MHz
Table 6. MRF5S9080NR1(NBR1) Test Circuit Component Designations and Values — 900 MHz
Part
C1, C2, C3
C4, C5, C6
C7, C8, C9
C10, C11
C12
C13
C14, C17, C18
C15, C16
C19
C20
C21
R1, R2
R3
Description
4.7
μF
Chip Capacitors (1812)
10 nF 200B Chip Capacitors
33 pF 600B Chip Capacitors
22 pF 600B Chip Capacitors
1.8 pF 600B Chip Capacitor
9.1 pF 600B Chip Capacitor
8.2 pF 600B Chip Capacitors
10 pF 600B Chip Capacitors
4.7 pF 600B Chip Capacitor
3.6 pF 600B Chip Capacitor
220
μF,
63 V Electrolytic Capacitor, Axial
10 kΩ, 1/4 W Chip Resistors (1206)
10
Ω,
1/4 W Chip Resistor (1206)
Part Number
C4532X5R1H475MT
200B103MW
600B330JW
600B220FW
600B1R8BW
600B9R1BW
600B8R2BW
600B100FW
600B4R7BW
600B3R6BW
13668221
Manufacturer
TDK
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
Philips
MRF5S9080NR1 MRF5S9080NBR1
RF Device Data
Freescale Semiconductor
3
C21
V
GG
C4 C7
C8
C5
V
DD
C1
R1
R2
C2
R3
C10
C13
C14
CUT OUT AREA
C16
C18
C19
C20
C11
C15
C17
C3
C12
C9
C6
MRF5S9080N/NB
Rev. 1
Figure 2. MRF5S9080NR1(NBR1) Test Circuit Component Layout — 900 MHz
MRF5S9080NR1 MRF5S9080NBR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS - 900 MHz
19.5
19
G
ps
, POWER GAIN (dB)
18.5
G
ps
18
17.5
17
16.5
860
IRL
V
DD
= 26 Vdc
I
DQ
= 600 mA
20
0
−20
−40
1020
80
60
40
η
D
, DRAIN EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB)
η
D
, DRAIN EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB)
η
D
880
900
920
940
960
980
1000
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P
out
= 80 Watts CW
19.2
60
G
ps
, POWER GAIN (dB)
19
η
D
40
18.8
G
ps
IRL
18.4
V
DD
= 26 Vdc
I
DQ
= 600 mA
20
18.6
0
−20
18.2
860
880
900
920
940
960
980
1000
−40
1020
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P
out
= 36 Watts CW
20
19
G
ps
, POWER GAIN (dB)
20
I
DQ
= 900 mA
19
750 mA
G
ps
, POWER GAIN (dB)
18
17
16
32 V
15
14
V
DD
= 12 V
13
1
10
100
1000
0
50
100
150
P
out
, OUTPUT POWER (WATTS)
P
out
, OUTPUT POWER (WATTS) CW
16 V
20 V
24 V
28 V
I
DQ
= 600 mA
f = 940 MHz
200
18 600 mA
450 mA
17
300 mA
16
15
14
V
DD
= 26 Vdc
f = 940 MHz
Figure 5. Power Gain versus Output Power
Figure 6. Power Gain versus Output Power
MRF5S9080NR1 MRF5S9080NBR1
RF Device Data
Freescale Semiconductor
5
京公网安备 11010802033920号
EEWORLD
