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MRFE6S9205HSR3

Description
transistors RF mosfet hv6e 900mhz 200w ni880hs
Categorysemiconductor    Discrete semiconductor   
File Size400KB,12 Pages
ManufacturerFREESCALE (NXP)
Environmental Compliance  
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MRFE6S9205HSR3 Overview

transistors RF mosfet hv6e 900mhz 200w ni880hs

MRFE6S9205HSR3 Parametric

Parameter NameAttribute value
ManufactureFreescale Semiconduc
Product CategoryTransistors RF MOSFET
RoHSYes
ConfiguratiSingle
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage66 V
Vgs - Gate-Source Breakdown Voltage- 0.5 V, 12 V
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseNI-880S
PackagingReel
Minimum Operating Temperature- 65 C
Factory Pack Quantity250
Unit Weigh6.762 g
Freescale Semiconductor
Technical Data
Document Number: MRFE6S9205H
Rev. 0, 10/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
Typical Single - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1400 mA, P
out
= 58 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 21.2 dB
Drain Efficiency — 34%
Device Output Signal PAR — 6.3 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 39.1 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz,
P
out
= 260 W CW
(
3 dB Input Overdrive from Rated
P
out
), Designed for Enhanced Ruggedness
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRFE6S9205HR3
MRFE6S9205HSR3
880 MHz, 58 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRFE6S9205HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRFE6S9205HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +66
- 0.5, +12
- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 202 W CW
Case Temperature 77°C, 58 W CW
Symbol
R
θJC
Value
(2,3)
0.27
0.33
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access the MTTF calculators
by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2007. All rights reserved.
MRFE6S9205HR3 MRFE6S9205HSR3
1
RF Device Data
Freescale Semiconductor

MRFE6S9205HSR3 Related Products

MRFE6S9205HSR3 MRFE6S9205HR3 MRFE6S9205HR5
Description transistors RF mosfet hv6e 900mhz 200w ni880hs mosfet RF N-CH 58w 28v NI-880 mosfet RF N-CH 58w 28v NI-880
Package / Case NI-880S NI-880 NI-880
Packaging Reel Tape & Reel (TR) Tape & Reel (TR)
Standard Package - 250 50
Category - Discrete Semiconductor Products Discrete Semiconductor Products
Family - RF FETs RF FETs
Transistor Type - LDMOS LDMOS
Frequency - 880MHz 880MHz
Gai - 21.2dB 21.2dB
Voltage - Tes - 28V 28V
Current Rating - 10µA 10µA
Current - Tes - 1.4A 1.4A
Power - Outpu - 58W 58W
Voltage - Rated - 66V 66V
Supplier Device Package - NI-880 NI-880
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