DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D333
BYW28 series
Ultra fast low-loss
controlled avalanche rectifier
Product specification
File under Discrete Semiconductors, SC01
1997 Nov 26
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability.
handbook, halfpage
BYW28 series
The package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
DESCRIPTION
Rugged glass SOD115 package,
using a high temperature alloyed
construction.
k
a
MAM384
Fig.1 Simplified outline (SOD115) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
PARAMETER
repetitive peak reverse voltage
BYW28-500
BYW28-600
V
R
continuous reverse voltage
BYW28-500
BYW28-600
I
F(AV)
average forward current
T
tp
= 85
°C;
lead length = 10 mm;
see Fig.2;
averaged over any 20 ms period;
see also Fig.6
T
amb
= 60
°C;
printed-circuit board
mounting (see Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward current
T
tp
= 85
°C;
see Fig.4
T
amb
= 60
°C;
see Fig.5
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
see Fig.7
−
−
−
500
600
4
V
V
A
−
−
500
600
V
V
CONDITIONS
MIN.
MAX.
UNIT
−
1.7
A
−
−
−
46
21
170
A
A
A
E
RSM
T
stg
T
j
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
−
−65
−65
20
+175
+175
mJ
°C
°C
1997 Nov 26
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
V
(BR)R
PARAMETER
forward voltage
reverse avalanche
breakdown voltage
BYW28-500
BYW28-600
I
R
reverse current
V
R
= V
RRMmax
; see Fig.9
V
R
= V
RRMmax
; T
j
= 165
°C;
see Fig.9
t
rr
reverse recovery time
when switched from I
F
= 0.5 A
to I
R
= 1 A; measured at
I
R
= 0.25 A; see Fig.12
f = 1 MHz; V
R
= 0; see Fig.10
when switched from I
F
= 1 A to
V
R
≥
30 V and dI
F
/dt =
−1
A/µs;
see Fig.13
CONDITIONS
I
F
= 3.5 A; T
j
= T
j max
; see Fig.8
I
F
= 3.5 A; see Fig.8
I
R
= 0.1 mA
560
675
−
−
−
−
−
−
−
−
MIN.
−
−
BYW28 series
TYP.
−
−
MAX.
0.90
1.15
V
V
UNIT
−
−
5
150
50
V
V
µA
µA
ns
C
d
dI
R
--------
dt
diode capacitance
maximum slope of reverse
recovery current
−
−
275
−
−
4
pF
A/µs
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.11.
For more information please refer to the
‘General Part of Handbook SC01’.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
VALUE
20
70
UNIT
K/W
K/W
1997 Nov 26
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
GRAPHICAL DATA
BYW28 series
handbook, halfpage
8
MBK237
handbook, halfpage
3
MBK236
IF(AV)
(A)
6
IF(AV)
(A)
2
4
1
2
0
0
40
80
120
200
160
Ttp (°C)
0
0
40
80
120
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.11.
Switched mode application.
160
200
Tamb (°C)
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, full pagewidth
50
MGL262
IFRM
(A)
40
δ
= 0.05
30
0.1
20
0.2
10
0.5
1
0
10
−2
10
−1
1
10
10
2
10
3
tp (ms)
10
4
T
tp
= 85
°C;
R
th j-tp
= 20 K/W.
V
RRMmax
during 1
− δ;
curves include derating for T
j max
at V
RRM
= V
RRMmax
.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 26
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYW28 series
handbook, full pagewidth
30
MBK238
IFRM
(A)
20
δ
= 0.05
0.1
10
0.2
0.5
1
0
10
-2
10
-1
1
10
10
2
10
3
10
4
tp (ms)
T
amb
= 60
°C;
R
th j-a
= 70 K/W.
V
RRMmax
during 1
− δ;
curves include derating for T
j max
at V
RRM
= V
RRMmax
.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, halfpage
5.0
MGL261
Ptot
(W)
4.0
handbook, halfpage
200
MGK645
a = 3 2.5 2
1.57
1.42
Tj
(°C)
3.0
100
2.0
1.0
0
0
1
2
3
4
5
IF(AV) (A)
0
0
50
VR (%VRmax)
100
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5.
Fig.6
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.7
Maximum permissible junction temperature
as a function of reverse voltage.
1997 Nov 26
5
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