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BYW29-100

Description
8 A, 100 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size30KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BYW29-100 Overview

8 A, 100 V, SILICON, RECTIFIER DIODE

BYW29-100 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-609 codee0
Maximum non-repetitive peak forward current100 A
Number of components1
Maximum operating temperature150 °C
Maximum output current7.3 A
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.025 µs
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
GENERAL DESCRIPTION
Glass passivated high efficiency
rectifier diodes in a plastic envelope,
featuring low forward voltage drop,
ultra-fast recovery times and soft
recovery characteristic. They are
intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and switching losses are
essential.
BYW29 series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
F(AV)
t
rr
PARAMETER
BYW29-
Repetitive peak reverse
voltage
Forward voltage
Forward current
Reverse recovery time
MAX.
100
100
0.895
8
25
MAX.
150
150
0.895
8
25
MAX.
200
200
0.895
8
25
UNIT
V
V
A
ns
PINNING - TO220AC
PIN
1
2
tab
DESCRIPTION
cathode (k)
anode (a)
cathode (k)
PIN CONFIGURATION
tab
SYMBOL
a
k
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
F(AV)
PARAMETER
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average forward current
1
square wave;
δ
= 0.5;
T
mb
128 ˚C
sinusoidal; a = 1.57;
T
mb
130 ˚C
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-40
-
-100
100
100
100
MAX.
-150
150
150
150
8
7.3
11.3
16
80
88
32
150
150
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
A
2
s
˚C
˚C
I
F(RMS)
I
FRM
I
FSM
I
2
t
T
stg
T
j
RMS forward current
Repetitive peak forward current t = 25
µs; δ
= 0.5;
T
mb
128 ˚C
Non-repetitive peak forward
t = 10 ms
current
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
2
I t for fusing
t = 10 ms
Storage temperature
Operating junction temperature
1
Neglecting switching and reverse current losses
October 1994
1
Rev 1.100

BYW29-100 Related Products

BYW29-100 BYW29 BYW29-150
Description 8 A, 100 V, SILICON, RECTIFIER DIODE Rectifier diodes ultrafast 7 A, SILICON, RECTIFIER DIODE
Is it Rohs certified? incompatible - incompatible
Reach Compliance Code unknow - unknow
Configuration SINGLE - SINGLE
Diode type RECTIFIER DIODE - RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V - 1.3 V
JESD-609 code e0 - e0
Maximum non-repetitive peak forward current 100 A - 100 A
Number of components 1 - 1
Maximum operating temperature 150 °C - 150 °C
Maximum output current 7.3 A - 7.3 A
Maximum repetitive peak reverse voltage 100 V - 100 V
Maximum reverse recovery time 0.025 µs - 0.025 µs
surface mount NO - NO
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
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