Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
GENERAL DESCRIPTION
Glass passivated high efficiency
rectifier diodes in a plastic envelope,
featuring low forward voltage drop,
ultra-fast recovery times and soft
recovery characteristic. They are
intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and switching losses are
essential.
BYW29 series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
F(AV)
t
rr
PARAMETER
BYW29-
Repetitive peak reverse
voltage
Forward voltage
Forward current
Reverse recovery time
MAX.
100
100
0.895
8
25
MAX.
150
150
0.895
8
25
MAX.
200
200
0.895
8
25
UNIT
V
V
A
ns
PINNING - TO220AC
PIN
1
2
tab
DESCRIPTION
cathode (k)
anode (a)
cathode (k)
PIN CONFIGURATION
tab
SYMBOL
a
k
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
F(AV)
PARAMETER
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average forward current
1
square wave;
δ
= 0.5;
T
mb
≤
128 ˚C
sinusoidal; a = 1.57;
T
mb
≤
130 ˚C
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-40
-
-100
100
100
100
MAX.
-150
150
150
150
8
7.3
11.3
16
80
88
32
150
150
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
A
2
s
˚C
˚C
I
F(RMS)
I
FRM
I
FSM
I
2
t
T
stg
T
j
RMS forward current
Repetitive peak forward current t = 25
µs; δ
= 0.5;
T
mb
≤
128 ˚C
Non-repetitive peak forward
t = 10 ms
current
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
2
I t for fusing
t = 10 ms
Storage temperature
Operating junction temperature
1
Neglecting switching and reverse current losses
October 1994
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
in free air
-
BYW29 series
TYP.
-
60
MAX.
2.7
-
UNIT
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
PARAMETER
Forward voltage
Reverse current
CONDITIONS
I
F
= 8 A; T
j
= 150˚C
I
F
= 8 A
I
F
= 20 A
V
R
= V
RWM
; T
j
= 100 ˚C
V
R
= V
RWM
MIN.
-
-
-
-
-
TYP.
0.80
0.92
1.1
0.3
2
MAX.
0.895
1.05
1.3
0.6
10
UNIT
V
V
V
mA
µA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
Q
s
t
rr
I
rrm
V
fr
PARAMETER
Reverse recovery charge
Reverse recovery time
Peak reverse recovery current
Forward recovery voltage
CONDITIONS
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/µs
I
F
= 1 A; V
R
≥
30 V;
-dI
F
/dt = 100 A/µs
I
F
= 10 A; V
R
≥
30 V; T
j
= 100 ˚C;
-dI
F
/dt = 50 A/µs
I
F
= 1 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
TYP.
4
20
1
1
MAX.
11
25
2
-
UNIT
nC
ns
A
V
October 1994
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYW29 series
I
dI
F
dt
F
8
7
PF / W
Vo = 0.791 V
Rs = 0.013 Ohms
BYW29
Tmb(max) / C
a = 1.57
1.9
2.2
128.4
131.1
133.8
136.5
139.2
141.9
144.6
147.3
t
6
rr
time
5
4
3
4
2.8
Q
I
R
I
s
10%
100%
2
1
rrm
0
0
1
2
3
4
IF(AV) / A
5
6
7
150
8
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
trr / ns
1000
I
F
100
IF=10A
time
IF=1A
V
F
V
V
F
time
10
fr
1
1
10
dIF/dt (A/us)
100
Fig.2. Definition of V
fr
Fig.5. Maximum t
rr
at T
j
= 25 ˚C.
12
10
8
6
PF / W
Vo = 0.791 V
Rs = 0.013 Ohms
BYW29
Tmb(max) / C
D = 1.0
120.3
123
trr / ns
1000
0.5
0.2
0.1
128.4
133.8
139.2
144.6
T
t
100
IF=10A
IF=1A
4
I
t
p
D=
t
p
T
10
2
0
0
2
4
6
IF(AV) / A
8
10
150
12
1
1
10
dIF/dt (A/us)
100
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
);
square current waveform where I
F(AV)
=I
F(RMS)
x
√
D.
Fig.6. Maximum t
rr
at T
j
= 100 ˚C.
October 1994
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
BYW29 series
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
3,0 max
not tinned
3,0
15,8
max
13,5
min
1,3
max
1
(2x)
2
0,9 max (2x)
0,6
2,4
5,08
Fig.12. TO220AC; pin 1 connected to mounting base.
Notes
1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1994
5
Rev 1.100
Microcontroller MCU
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