AP92T03GI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Low On-resistance
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
30V
4mΩ
80A
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
80
50
300
31.3
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
.
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
4.0
65
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
200906251
AP92T03GI-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=40A
V
GS
=4.5V, I
D
=30A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
o
Min.
30
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
100
-
-
45
6
26
12
63
40
7
930
770
Max. Units
-
4
5.2
2.5
-
10
+100
72
-
-
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=40A
V
DS
=24V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=40A
V
DS
=20V
V
GS
=4.5V
V
DS
=15V
I
D
=40A
R
G
=1Ω,V
GS
=10V
R
D
=0.375Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
3500 5600
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=40A, V
GS
=0V
I
S
=20A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
39
42
Max. Units
1.2
-
-
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP92T03GI-HF
300
240
T
C
=25 C
250
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
T
C
=150 C
200
o
10V
7.0V
5.0V
4.5V
200
160
150
120
V
G
= 3.0V
80
100
V
G
= 3.0V
50
40
0
0
2
4
6
8
10
0
0
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
5
1.8
I
D
= 30 A
T
C
=25
℃
Normalized R
DS(ON)
4.6
I
D
=40A
V
G
=10V
R
DS(ON)
(m
Ω
)
1.4
4.2
3.8
1
3.4
3
0.6
2
4
6
8
10
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
6.0
40
30
5.0
R
DS(ON)
(m
Ω
)
I
S
(A)
V
GS
=4.5V
4.0
20
T
j
=150 C
o
T
j
=25 C
o
V
GS
=10V
3.0
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
2.0
0
20
40
60
80
100
V
SD
, Source-to-Drain Voltage (V)
I
D
, Drain Current (A)
Fig 5. Forward Characteristic of
Fig 6. On-Resistance vs. Drain Current
Reverse Diode
3
AP92T03GI-HF
12
5000
f=1.0MHz
I
D
= 40 A
10
V
GS
, Gate to Source Voltage (V)
4000
8
C (pF)
V
DS
= 12 V
V
DS
= 16 V
V
DS
= 20 V
C
iss
3000
6
2000
4
1000
2
C
oss
C
rss
0
0
20
40
60
80
100
120
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor=0.5
Normalized Thermal Response (R
thjc
)
0.2
100
0.1
0.1
I
D
(A)
100us
0.05
0.02
0.01
1ms.
10
P
DM
0.01
t
Single Pulse
10ms
T
C
=25 C
Single Pulse
1
0.1
1
10
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
o
100ms
DC
100
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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