®
BYW29/F/FP/G-200
HIGH EFFICIENCY FAST RECOVERY DIODES
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
trr (max)
V
F
(max)
8A
200 V
25 ns
0.85 V
A
NC
A
K
K
FEATURES AND BENEFITS
Very Low Forward Losses
Negligible switching losses
High surge current capability
Insulated
packages
(ISOWATT220AC,
TO-220FPAC):
Insulation voltage: 2000 VDC
Typical insulation capacitance = 12 pF
s
s
s
s
D
2
PAK
BYW29G-200
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
DESCRIPTION
Single rectifier suited for Switch Mode Power
Supply and high frequency DC to DC converters.
Packaged in TO-220AC, ISOWATT220AC,
TO-220FPAC and D
2
PAK, this device is intended
for use in high frequency inverters, free wheeling
and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
Parameter
Repetitive peak reverse voltage
RMS forward current
I
F(RMS)
I
F(AV)
Average forward current
δ
= 0.5
D
2
PAK /
TO-220AC
ISOWATT220AC
TO-220FPAC
I
FSM
Tstg
Tj
Surge non repetitive forward current
(All pins connected)
Storage and junction temperature range
Maximum operating junction temperature
b
O
so
te
le
ro
P
uc
d
s)
t(
K
A
TO-220FPAC
BYW29FP-200
P
e
A
K
od
r
s)
t(
uc
A
K
TO-220AC
BYW29-200
ISOWATT220AC
BYW29F-200
Value
200
16
8
Unit
V
A
A
Tc =120°C
Tc = 100°C
tp=10ms
sinusoidal
80
- 65 to + 150
+ 150
A
°C
May 2002 - Ed: 4B
1/7
BYW29/F/FP/G-200
THERMAL RESISTANCE
Symbol
Rth (j-c)
Parameter
Junction to case thermal resistance
TO-220AC
D2PAK
ISOWATT220AC
TO-220FPAC
Value
2.8
5
5.5
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
I
R
*
Parameter
Reverse leakage current
Test Conditions
V
R
= V
RRM
T
j
= 25°C
T
j
= 100°C
V
F **
Forward voltage drop
I
F
= 5 A
I
F
= 10 A
I
F
= 10 A
Pulse test :
* tp = 5 ms, duty cycle < 2 %
** tp = 380
µs,
duty cycle < 2 %
Min.
Typ.
Max.
10
T
j
= 125°C
T
j
= 125°C
To evaluate the conduction losses use the following equation :
P = 0.65 x I
F(AV)
+ 0.040 I
F2(RMS)
RECOVERY CHARACTERISTICS
Symbol
t
rr
Parameter
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
Reverse recovery
time
t
fr
Forward recovery
time
V
FP
Peak forward
voltage
uc
d
s)
t(
O
-
so
b
T
j
= 25°C
te
le
ro
P
uc
d
s)
t(
Unit
µA
Test Conditions
so
b
-O
I
F
= 0.5A
I
R
= 1A
te
le
r
P
od
s)
t(
uc
0.85
1.05
1.15
V
0.6
mA
Min.
Typ.
Max.
25
35
Unit
ns
T
j
= 25°C
Irr = 0.25 A
T
j
= 25°C
dI
F
/dt = -50A/µs
I
F
= 1A
V
R
=
30V
15
T
j
= 25°C
I
F
= 1A
dI
F
/dt = 100A/µs
V
FR
= 1.1 x V
F
max
T
j
= 25°C
I
F
= 1A
dI
F
/dt = 100A/µs
ns
V
2
2/7
BYW29/F/FP/G-200
Fig.1 :
Average forward power dissipation versus
average forward current.
PF(av)(W)
12
δ
= 0.05
δ
= 0.1
δ
= 0.2
δ
= 0.5
Fig.2 :
Peak current versus form factor.
IM(A)
IM
160
140
T
10
120
δ
=1
P = 10W
δ
=tp/T
tp
8
100
80
60
T
6
4
40
P = 15W
2
IF(av)(A)
0
0
1
2
3
4
5
6
7
8
δ
=tp/T
9
10
20
tp
P = 5W
11
0
0.0
0.1
δ
0.2
0.3
0.4
0.5
Fig.3 :
Forward voltage drop versus forward cur-
rent (maximum values).
IFM(A)
100.0
Fig.4-1 :
Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AC,
D
2
PAK).
Zth(j-c)/Rth(j-c)
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
δ
= 0.5
10.0
b
O
1.0
so
te
le
ro
P
uc
d
0.6
0.7
s)
t(
0.8
0.9
1.0
P
e
od
r
s)
t(
uc
Tj=125°C
δ
= 0.2
Tj=25°C
δ
= 0.1
1.0
Single pulse
T
VFM(V)
1.0
tp(s)
1.E-01
0.1
0.0
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
0.1
1.E-03
δ
=tp/T
tp
1.E-02
1.E+00
Fig.4-2 :Relative
variation of thermal impedance
junction to case versus pulse duration
(TO-220FPAC, ISOWATT220AC).
Zth(j-c)/Rth(j-c)
δ
= 0.5
Fig.5-1 :
Non repetitive surge peak forward current
versus overload duration (TO-220AC, D
2
PAK).
IM(A)
1.0
80
70
60
50
40
30
δ
= 0.2
δ
= 0.1
Tc=25°C
0.1
Single pulse
Tc=75°C
T
20
I
M
Tc=120°C
tp(s)
0.0
1.E-03
1.E-02
1.E-01
10
t
δ
=tp/T
1.E+00
tp
δ
=0.5
t(s)
1.E-02
1.E-01
1.E+00
1.E+01
0
1.E-03
3/7
BYW29/F/FP/G-200
Fig.5-2 :
Non repetitive surge peak forward cur-
rent versus overload duration (TO-220FPAC,
ISOWATT220AC).
IM(A)
60
Fig.6 :
Average current versus ambient tempera-
ture. (δ = 0.5)
IF(av)(A)
10
9
Rth(j-a)=Rth(j-c)
ISOWATT220AC
TO-220AC/D²PAK
50
8
40
Tc=25°C
7
6
TO-220FPAC
30
Tc=75°C
5
4
3
I
M
t
Rth(j-a)=15°C:W
20
Tc=100°C
2
1
0
10
δ
=0.5
t(s)
1.E-02
1.E-01
1.E+00
Tamb(°C)
0
25
50
75
100
0
1.E-03
Fig.7 :
Junction capacitance versus reverse volt-
age applied (Typical values).
C(pF)
100
F=1MHz
Vosc=30mV
Tj=25°C
Fig.8 :
Reverse recovery charges versus dI
F
/dt
(90%confidence).
Qrr(nC)
1000
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
100
b
O
10
so
IF=8A
VR=100V
Tj=100°C
te
le
r
P
d
o
uc
s)
t(
125
150
P
e
od
r
s)
t(
uc
VR(V)
dIF/dt(A/µs)
100
1000
10
1
10
100
1000
10
Fig.9 :
Peak reverse recovery current versus
dIF/dt (90% confidence).
IRM(A)
Fig.10 :
Dynamic parameters versus junction tem-
perature.
Qrr; IRM[Tj] / Qrr; IRM[Tj=125°C]
IF=8A
VR=100V
100
1.50
IF=8A
VR=100V
Tj=100°C
1.25
1.00
IRM
10
0.75
0.50
QRR
0.25
dIF/dt(A/µs)
1
10
100
1000
0.00
0
25
50
Tj(°C)
75
100
125
150
4/7
BYW29/F/FP/G-200
Fig.11 :
Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35µm) for
D
2
PAK.
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
12
14
16
18
20
S(cm²)
PACKAGE MECHANICAL DATA
D
2
PAK (Plastic)
REF.
A
E
L2
C2
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
A1
A2
B
B2
C
D
E
L
D
L
L3
A1
b
O
so
A
te
le
Min.
4.40
2.49
0.03
0.70
1.14
0.45
8.95
1.23
ro
P
Max.
4.60
2.69
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
1.40
1.75
3.20
8°
uc
d
Min.
0.173
0.098
0.001
0.027
0.045
0.017
0.048
0.352
0.393
0.192
0.590
0.050
0.055
0.094
0°
s)
t(
DIMENSIONS
Millimeters
P
e
od
r
s)
t(
uc
Inches
Max.
0.181
0.106
0.009
0.037
0.067
0.024
0.054
0.368
0.409
0.208
0.624
0.055
0.069
0.126
8°
C2
B2
B
C
R
10.00
4.88
G
G
A2
15.00
1.27
1.40
2.40
0°
L2
L3
M
R
M
*
V2
* FLAT ZONE NO LESS THAN 2mm
0.40 typ.
0.016 typ.
V2
FOOT PRINT
(in millimeters)
16.90
10.30
1.30
5.08
3.70
8.90
5/7
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