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BYZ35K39

Description
Silicon Protectifiers with TVS characteristics High-temperature diodes
CategoryDiscrete semiconductor    diode   
File Size148KB,2 Pages
ManufacturerDIOTEC
Websitehttp://www.diotec.com/
Environmental Compliance
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BYZ35K39 Overview

Silicon Protectifiers with TVS characteristics High-temperature diodes

BYZ35K39 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDIOTEC
package instructionROHS COMPLIANT, METAL, PRESSFIT-1
Contacts1
Reach Compliance Codecompli
ECCN codeEAR99
Maximum breakdown voltage42.9 V
Minimum breakdown voltage35.1 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-MUPF-P1
Humidity sensitivity level1
Number of components1
Number of terminals1
Package body materialMETAL
Package shapeROUND
Package formPRESS FIT
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Certification statusNot Qualified
surface mountNO
technologyAVALANCHE
Terminal formPIN/PEG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
BYZ 35A22 ... BYZ 35A47
BYZ 35K22 ... BYZ 35K47
Silicon Protectifiers
with TVS characteristics
High-temperature diodes
Silizium Schutzgleichrichter
mit Begrenzereigenschaften
Hochtemperaturdioden
Ø
12.75
Ø
11
±0.1
Nominal current – Nennstrom
Nominal breakdown voltage
Nominale Abbruch-Spannung
Rändel 0.8
knurl 0.8
35 A
19.8 ... 51.7 V
28.5
±0.5
1.3
Metal press-fit case with plastic cover
Metall-Einpreßgehäuse mit Plastik-Abdeckung
Weight approx. – Gewicht ca.
Casting compound has UL classification 94V-0
Vergußmasse UL94V-0 klassifiziert
Standard packaging: bulk
Standard Lieferform: lose im Karton
10 g
Ø
13
±01
Dimensions / Maße in mm
Maximum ratings
Type / Typ
Wire to / Draht an
Anode
BYZ 35A22
BYZ 35A27
BYZ 35A33
BYZ 35A39
BYZ 35A47
Cathode
BYZ 35K22
BYZ 35K27
BYZ 35K33
BYZ 35K39
BYZ 35K47
Breakdown voltage
Abbruch-Spannung
I
T
= 100 mA
V
BRmin
[V] V
BRmax
19.8
24.3
29.7
35.1
42.3
24.2
29.7
36.3
42.9
51.7
Reverse voltage
Sperrspannung
I
R
= 5
:
A
V
R
[V]
> 17.8
> 21.8
> 26.8
> 31.6
> 38.1
5
±0.2
10.7
±0.2
Grenzwerte
Max. clamping voltage
Max. Begrenzerspanng.
at / bei I
PP
, t
p
= 1m s
V
C
[V]
I
PP
[A]
31,9
39,1
47,7
56,4
67,8
161
128
106
89
75
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
T
C
= 150
/
C
I
FAV
I
FSM
i
2
t
V
F
T
j
T
S
35 A
360 / 400 A
660 A
2
s
< 1.1 V
– 50…+215
/
C
– 50…+215
/
C
Peak forward surge current, 50 / 60 Hz half sine-wave
Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle
Rating for fusing, t <10 ms
Grenzlastintegral, t <10 ms
Forward voltage
Durchlaßspannung
T
j
= 25
/
C
T
A
= 25
/
C
T
A
= 25
/
C
I
F
= 35 A
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
07.01.2003
1

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Description Silicon Protectifiers with TVS characteristics High-temperature diodes Silicon Protectifiers with TVS characteristics High-temperature diodes Silicon Protectifiers with TVS characteristics High-temperature diodes Silicon Protectifiers with TVS characteristics High-temperature diodes Silicon Protectifiers with TVS characteristics High-temperature diodes Silicon Protectifiers with TVS characteristics High-temperature diodes
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Maker DIOTEC DIOTEC DIOTEC DIOTEC DIOTEC DIOTEC
package instruction ROHS COMPLIANT, METAL, PRESSFIT-1 ROHS COMPLIANT, METAL, PRESSFIT-1 ROHS COMPLIANT, METAL, PRESSFIT-1 ROHS COMPLIANT, METAL, PRESSFIT-1 ROHS COMPLIANT, METAL, PRESSFIT-1 ROHS COMPLIANT, METAL, PRESSFIT-1
Contacts 1 1 1 1 1 1
Reach Compliance Code compli compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum breakdown voltage 42.9 V 36.3 V 29.7 V 29.7 V 42.9 V 36.3 V
Minimum breakdown voltage 35.1 V 29.7 V 24.3 V 24.3 V 35.1 V 29.7 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code O-MUPF-P1 O-MUPF-P1 O-MUPF-P1 O-MUPF-P1 O-MUPF-P1 O-MUPF-P1
Humidity sensitivity level 1 1 1 1 1 1
Number of components 1 1 1 1 1 1
Number of terminals 1 1 1 1 1 1
Package body material METAL METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form PRESS FIT PRESS FIT PRESS FIT PRESS FIT PRESS FIT PRESS FIT
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260
polarity UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location UPPER UPPER UPPER UPPER UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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