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JANTX2N6786

Description
1.25A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
CategoryDiscrete semiconductor    The transistor   
File Size212KB,22 Pages
ManufacturerIntersil ( Renesas )
Websitehttp://www.intersil.com/cda/home/
Download Datasheet Parametric View All

JANTX2N6786 Overview

1.25A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

JANTX2N6786 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid2078490395
Reach Compliance Codenot_compliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (Abs) (ID)1.2 A
Maximum drain current (ID)1.25 A
Maximum drain-source on-resistance3.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-205AF
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)15 W
Maximum pulsed drain current (IDM)5.5 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 12 March 2007.
INCH-POUND
MIL-PRF-19500/556H
12 December 2006
SUPERSEDING
MIL-PRF-19500/556G
5 November 2003
* PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,
TYPES 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, AND 2N6786U,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode,
MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as
specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figure 1 [similar to TO-205AF (formerly TO-39)], figure 2 (LCC), and figure 3 for
JANHC and JANKC die dimensions.
1.3 Maximum ratings. Unless otherwise specified, T
A
= +25°C.
Type
P
T
(1)
T
C
=
+25°C
W
2N6782, U
2N6784, U
2N6786, U
15
15
15
P
T
T
A
= +25°C
W
0.8
0.8
0.8
V dc
100
200
400
V dc
100
200
400
V dc
±20
±20
±20
V
DS
V
DG
V
GS
I
D1
(2) (3)
T
C
= +25°C
A dc
3.5
2.25
1.25
I
D2
(2)
T
C
=
+100°C
A dc
2.25
1.50
0.80
A dc
3.50
2.25
1.25
I
S
I
DM
(4)
T
J
and
T
STG
°C
-55 to
+150
400
V
ISO
70,000
foot
altitude
V dc
A(pk)
14.0
9.0
5.5
(1)
(2)
Derate linearly 0.12 W/°C for T
C
> +25°C.
The following formula derives the maximum theoretical I
D
limit. I
D
is limited by package and internal wires
and may be limited by pin diameter:
T
JM
- T
C
I
D
=
(
R
θ
JC
)
x
(
R
DS
( on ) at T
JM
)
See figure 4, maximum drain current graph.
I
DM
= 4 x I
D1
as calculated in note 2.
(3)
(4)
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
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