4 Ω R
ON
, 4-/8-Channel
±15 V/+12 V/±5 V
iCMOS
Multiplexers
ADG1408/ADG1409
FEATURES
4.7 Ω maximum on resistance @ 25°C
0.5 Ω on resistance flatness
Up to 190 mA continuous current
Fully specified at ±15 V/+12 V/±5 V
3 V logic-compatible inputs
Rail-to-rail operation
Break-before-make switching action
16-lead TSSOP and 4 mm × 4 mm LFCSP packages
S1
FUNCTIONAL BLOCK DIAGRAM
ADG1408
S1A
DA
S4A
D
S1B
DB
S8
1-OF-8
DECODER
S4B
1-OF-4
DECODER
04861-001
ADG1409
APPLICATIONS
Relay replacement
Audio and video routing
Automatic test equipment
Data acquisition systems
Temperature measurement systems
Avionics
Battery-powered systems
Communication systems
Medical equipment
A0 A1 A2 EN
A0
A1
EN
Figure 1.
GENERAL DESCRIPTION
The ADG1408/ADG1409 are monolithic
iCMOS®
analog multip-
lexers comprising eight single channels and four differential
channels, respectively. The ADG1408 switches one of eight
inputs to a common output, as determined by the 3-bit binary
address lines, A0, A1, and A2. The ADG1409 switches one of
four differential inputs to a common differential output, as
determined by the 2-bit binary address lines, A0 and A1. An EN
input on both devices is used to enable or disable the device.
When disabled, all channels are switched off.
The
iCMOS
(industrial CMOS) modular manufacturing process
combines high voltage CMOS (complementary metal-oxide
semiconductor) and bipolar technologies. It enables the devel-
opment of a wide range of high performance analog ICs capable
of 33 V operation in a footprint that no other generation of high
voltage parts has been able to achieve. Unlike analog ICs using
conventional CMOS processes,
iCMOS
components can tolerate
high supply voltages while providing increased performance,
dramatically lower power consumption, and reduced package size.
The ultralow on resistance and on resistance flatness of these
switches make them ideal solutions for data acquisition and
gain switching applications where low distortion is critical.
iCMOS
construction ensures ultralow power dissipation,
making the parts ideally suited for portable and battery-
powered instruments.
PRODUCT HIGHLIGHTS
1.
2.
3.
4.
4 Ω on resistance.
0.5 Ω on resistance flatness.
3 V logic compatible digital input, V
IH
= 2.0 V, V
IL
= 0.8 V.
16-lead TSSOP and 4 mm × 4 mm LFCSP packages.
Table 1. Related Devices
Part No.
ADG1208/ADG1209
Description
Low capacitance, low charge injection,
and low leakage 4-/8-channel ±15 V
multiplexers
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113 ©2006–2009 Analog Devices, Inc. All rights reserved.
ADG1408/ADG1409
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
15 V Dual Supply .......................................................................... 3
12 V Single Supply ........................................................................ 5
5 V Dual Supply ............................................................................ 7
Continuous Current per channel, S or D ...................................8
Absolute Maximum Ratings ............................................................9
Thermal Resistance .......................................................................9
ESD Caution...................................................................................9
Pin Configurations and Function Descriptions ......................... 10
Typical Performance Characteristics ........................................... 12
Terminology .................................................................................... 16
Test Circuits ..................................................................................... 17
Outline Dimensions ....................................................................... 19
Ordering Guide .......................................................................... 20
REVISION HISTORY
3/09—Rev. A to Rev. B
Change to I
DD
Parameter (Table 2) ................................................. 4
Change to I
DD
Parameter (Table 3) ................................................. 6
8/08—Rev. 0 to Rev. A
Changes to Features.......................................................................... 1
Added Table 5; Renumbered Sequentially .................................... 8
Changes to Table 6 ............................................................................ 9
Added Exposed Pad Notation to Figure 3 ................................... 10
Added Exposed Pad Notation to Figure 5 ................................... 11
Added Exposed Pad Notation to Outline Dimensions ............. 19
8/06—Revision 0: Initial Version
Rev. B | Page 2 of 20
ADG1408/ADG1409
SPECIFICATIONS
15 V DUAL SUPPLY
V
DD
= +15 V ± 10%, V
SS
= −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On Resistance Match Between
Channels (ΔR
ON
)
On Resistance Flatness (R
FLAT(ON)
)
LEAKAGE CURRENTS
Source Off Leakage, I
S
(Off )
Drain Off Leakage, I
D
(Off )
Channel On Leakage, I
D
, I
S
(On)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
Digital Input Capacitance, C
IN
DYNAMIC CHARACTERISTICS
2
Transition Time, t
TRANSITION
Break-Before-Make Time Delay, t
BBM
t
ON
(EN)
t
OFF
(EN)
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Total Harmonic Distortion, THD + N
−3 dB Bandwidth
ADG1408
ADG1409
Insertion Loss
C
S
(Off )
C
D
(Off )
ADG1408
ADG1409
C
D
, C
S
(On)
ADG1408
ADG1409
+25°C
−40°C to
+85°C
−40°C to
+125°C
1
V
SS
to V
DD
4
4.7
0.2
0.78
0.5
0.72
±0.04
±0.2
±0.04
±0.45
±0.1
±1.5
5.7
0.85
0.77
6.7
1.1
0.92
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
pF typ
ns typ
ns max
ns typ
ns min
ns typ
ns max
ns typ
ns max
pC typ
dB typ
dB typ
% typ
Test Conditions/Comments
V
S
= ±10 V, I
S
= −10 mA; see Figure 26
V
DD
= +13.5 V, V
SS
= −13.5 V
V
S
= ±10 V, I
S
= −10 mA
V
S
= ±10 V, I
S
= −10 mA
V
DD
= +16.5 V, V
SS
= −16.5 V
V
S
= ±10 V, V
D
= 10 V; see Figure 27
V
S
= ±10 V, V
D
= 10 V; see Figure 27
V
S
= V
D
= ±10 V; see Figure 28
±0.6
±2
±3
±5
±30
±30
2.0
0.8
±0.005
±0.1
4
140
170
50
100
120
100
120
−50
−70
−70
0.025
V
IN
= V
GND
or V
DD
210
240
30
150
150
165
170
R
L
= 100 Ω, C
L
= 35 pF
V
S
= 10 V, see Figure 29
R
L
= 100 Ω, C
L
= 35 pF
V
S1
= V
S2
= 10 V; see Figure 30
R
L
= 100 Ω, C
L
= 35 pF
V
S
= 10 V; see Figure 31
R
L
= 100 Ω, C
L
= 35 pF
V
S
= 10 V; see Figure 31
V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 32
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 33
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 34
R
L
= 110 Ω, 15 V p-p, f = 20 Hz to 20 kHz;
see Figure 36
R
L
= 50 Ω, C
L
= 5 pF; see Figure 35
60
115
0.24
14
80
40
135
90
Rev. B | Page 3 of 20
MHz typ
MHz typ
dB typ
pF typ
pF typ
pF typ
pF typ
pF typ
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 35
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
ADG1408/ADG1409
Parameter
POWER REQUIREMENTS
I
DD
+25°C
0.002
1
220
380
I
SS
V
DD
/V
SS
1
2
−40°C to
+85°C
−40°C to
+125°C
1
Unit
μA typ
μA max
μA typ
μA max
μA typ
μA max
V min/max
Test Conditions/Comments
V
DD
= +16.5 V, V
SS
= −16.5 V
Digital inputs = 0 V or V
DD
Digital inputs = 5 V
Digital inputs = 0 V, 5 V or V
DD
0.002
1
±4.5/±16.5
Temperature range: Y version: −40°C to +125°C.
Guaranteed by design, not subject to production test.
Rev. B | Page 4 of 20
ADG1408/ADG1409
12 V SINGLE SUPPLY
V
DD
= 12 V ± 10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted.
Table 3.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On Resistance Match
Between Channels (ΔR
ON
)
On Resistance Flatness (R
FLAT(ON)
)
LEAKAGE CURRENTS
Source Off Leakage, I
S
(Off )
Drain Off Leakage, I
D
(Off )
Channel On Leakage, I
D
, I
S
(On)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
Digital Input Capacitance, C
IN
DYNAMIC CHARACTERISTICS
2
Transition Time, t
TRANSITION
Break-Before-Make Time Delay, t
BBM
t
ON
(EN)
t
OFF
(EN)
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
−3 dB Bandwidth
ADG1408
ADG1409
Insertion Loss
C
S
(Off )
C
D
(Off )
ADG1408
ADG1409
C
D
, C
S
(On)
ADG1408
ADG1409
+25°C
−40°C to
+85°C
−40°C to
+125°C
1
0 to V
DD
6
8
0.2
0.82
1.5
2.5
±0.04
±0.2
±0.04
±0.45
±0.06
±0.44
9.5
0.85
2.5
11.2
1.1
2.8
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
pF typ
ns typ
ns max
ns typ
ns min
ns typ
ns max
ns typ
ns max
pC typ
dB typ
dB typ
MHz typ
MHz typ
dB typ
pF typ
pF typ
pF typ
pF typ
pF typ
Test Conditions/Comments
V
S
= 0 V to 10 V, I
S
= −10 mA; see Figure 26
V
DD
= 10.8 V, V
SS
= 0 V
V
S
= 0 V to 10 V, I
S
= −10 mA
V
S
= 0 V to 10 V, I
S
= −10 mA
V
DD
= 13.2 V
V
S
= 1 V/10 V, V
D
= 10 V/1 V; see Figure 27
V
S
= 1 V/10 V, V
D
= 10 V/1 V; see Figure 27
V
S
= V
D
= 1 V or 10 V; see Figure 28
±0.6
±1
±1.3
±5
±37
±32
2.0
0.8
±0.005
±0.1
5
200
260
90
160
210
115
145
−12
−70
−70
36
72
0.5
25
165
80
200
120
V
IN
= V
GND
or V
DD
330
380
40
250
180
285
200
R
L
= 100 Ω, C
L
= 35 pF
V
S
= 8 V; see Figure 29
R
L
= 100 Ω, C
L
= 35 pF
V
S1
= V
S2
= 8 V; see Figure 30
R
L
= 100 Ω, C
L
= 35 pF
V
S
= 8 V; see Figure 31
R
L
= 100 Ω, C
L
= 35 pF
V
S
= 8 V; see Figure 31
V
S
= 6 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 32
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 33
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 34
R
L
= 50 Ω, C
L
= 5 pF; see Figure 35
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 35
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
Rev. B | Page 5 of 20
京公网安备 11010802033920号
EEWORLD
