IS61C1024AL
IS64C1024AL
128K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
• High-speed access time: 12, 15 ns
•
Low active power: 160 mW (typical)
•
Low standby power: 1000 µW (typical) CMOS
standby
• Output Enable (OE) and two Chip Enable
(CE1 and CE2) inputs for ease in applications
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 5V (±10%) power supply
• Commercial, industrial, and automotive tempera-
ture ranges available
• Lead free available
MAY 2012
DESCRIPTION
The
ISSI
IS61C1024AL/IS64C1024AL is a very high-
speed, low power, 131,072-word by 8-bit CMOS static
RAMs. They are fabricated using ISSI's high-performance
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields higher
performance and low power consumption devices.
When CE1 is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation
can be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip
Enable inputs, CE1 and CE2. The active LOW Write Enable
(WE) controls both writing and reading of the memory.
The IS61C1024AL/IS64C1024AL is available in 32-pin
300-mil SOJ, 32-pin 400-mil SOJ, 32-pin TSOP (Type I,
8x20), and 32-pin sTSOP (Type I, 8 x 13.4) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K x 8
MEMORY ARRAY
VDD
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE1
CE2
OE
WE
CONTROL
CIRCUIT
Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest
version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
05/09/2012
1
IS61C1024AL, IS64C1024AL
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
term
t
stg
P
t
I
out
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to +7.0
–65 to +150
1.5
20
Unit
V
°C
W
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating con-
ditions for extended periods may affect reliability.
CAPACITANCE
(1,2)
Symbol
c
In
c
out
Parameter
Input Capacitance
Output Capacitance
Conditions
V
In
= 0V
V
out
= 0V
Max.
5
7
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
a
= 25°c,
f = 1 MHz, V
DD
= 5.0V.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
oh
V
ol
V
Ih
V
Il
I
lI
I
lo
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
DD
=
Min., I
oh
=
–4.0 mA
V
DD
=
Min., I
ol
=
8.0 mA
GND ≤ V
In
≤
V
DD
GND ≤ V
out
≤
V
DD
Outputs Disabled
Com.
Ind.
Auto.
Com.
Ind.
Auto.
Min.
2.4
—
2.2
–0.3
–1
–2
–5
–1
–2
–5
Max.
—
0.4
V
DD
+ 0.5
0.8
1
2
5
1
2
5
Unit
V
V
V
V
µA
µA
Note:
1. V
Il
= –3.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
05/09/2012
3
IS61C1024AL, IS64C1024AL
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
t
rc
t
aa
t
oha
t
ace
1
t
ace
2
t
Doe
t
lzoe
(2)
t
hzoe
(2)
t
lzce
1
(2)
t
lzce
2
(2)
t
hzce
(2)
t
Pu
(3)
t
PD
(3)
Parameter
Read Cycle Time
-12
Min. Max.
12
—
—
3
—
—
—
0
0
2
2
0
0
—
12
—
12
12
6
—
6
—
—
7
—
12
-15
Min. Max.
15
—
—
3
—
—
—
0
0
2
2
0
0
—
15
—
15
15
7
—
6
—
—
8
—
12
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
Output Hold Time
CE1 Access Time
CE2 Access Time
OE Access Time
OE to Low-Z Output
OE to High-Z Output
CE1 to Low-Z Output
CE2 to Low-Z Output
CE1 or CE2 to High-Z Output
CE1 or CE2 to Power-Up
CE1 or CE2 to Power-Down
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels
of 0 to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
480
Ω
5V
OUTPUT
30 pF
Including
jig and
scope
255
Ω
5V
OUTPUT
5 pF
Including
jig and
scope
255
Ω
480
Ω
Figure 1
Rev. D
05/09/2012
Figure 2
5
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PCB Design
京公网安备 11010802033920号
EEWORLD
