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IS43DR16160A-3DBL-TR

Description
dram 256m (16mx16) 333mhz ddr2 1.8v
Categorysemiconductor    Other integrated circuit (IC)   
File Size1MB,48 Pages
ManufacturerAll Sensors
Environmental Compliance  
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IS43DR16160A-3DBL-TR Overview

dram 256m (16mx16) 333mhz ddr2 1.8v

IS43DR16160A-3DBL-TR Parametric

Parameter NameAttribute value
ManufactureISSI
Product CategoryDRAM
RoHSYes
Data Bus Width16 bi
Organizati16 M x 16
Package / CaseBGA-84
Memory Size256 Mbi
Maximum Clock Frequency333 MHz
Supply Voltage - Max1.9 V
Supply Voltage - Mi1.7 V
Maximum Operating Temperature+ 85 C
PackagingReel
Minimum Operating Temperature0 C
Mounting StyleSMD/SMT
Factory Pack Quantity2500
IS43/46DR83200A
IS43/46DR16160A
32Mx8, 16Mx16 DDR2 DRAM
FEATURES
V
dd
= 1.8V ±0.1V, V
ddq
= 1.8V ±0.1V
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Double data rate interface: two data transfers
per clock cycle
Differential data strobe (DQS,
DQS)
4-bit prefetch architecture
On chip DLL to align DQ and DQS transitions
with CK
4 internal banks for concurrent operation
Programmable CAS latency (CL) 3, 4, 5, and 6
supported
Posted CAS and programmable additive latency
(AL) 0, 1, 2, 3, 4, and 5 supported
WRITE latency = READ latency - 1 tCK
Programmable burst lengths: 4 or 8
Adjustable data-output drive strength, full and
reduced strength options
On-die termination (ODT)
AUGUST 2012
DESCRIPTION
ISSI's 256Mb DDR2 SDRAM uses a double-data-rate
architecture to achieve high-speed operation. The
double-data rate architecture is essentially a 4n-prefetch
architecture, with an interface designed to transfer two
data words per clock cycle at the I/O balls.
ADDRESS TABLE
Parameter
Configuration
Refresh Count
Row Addressing
Column
Addressing
Bank Addressing
Precharge
Addressing
32M x 8
8M x 8 x 4
banks
8K/64ms
1K (A0-A9)
BA0, BA1
A10
16M x 16
4M x 16 x 4
banks
8K/64ms
512 (A0-A8)
BA0, BA1
A10
8K (A0-A12) 8K (A0-A12)
OPTIONS
Configuration(s):
32Mx8 (8Mx8x4 banks) IS43/46DR83200A
16Mx16 (4Mx16x4 banks) IS43/46DR16160A
Package:
x8: 60-ball TW-BGA (8mm x 10.5mm)
x16: 84-ball TW-BGA (8mm x 12.5mm)
Timing – Cycle time
2.5ns @CL=6 DDR2-800E
3.0ns @CL=5 DDR2-667D
3.75ns @CL=4 DDR2-533C
5.0ns @CL=3 DDR2-400B
Temperature Range:
Commercial (0°C
Tc
85°C)
Industrial (-40°C
Tc
95°C; -40°C
T
a
85°C)
Automotive, A1 (-40°C
Tc
95°C; -40°C
T
a
85°C)
Automotive, A2 (-40°C
Tc; T
a
105°C)
KEY TIMING PARAMETERS
Speed Grade
tRCD
tRP
tRC
tRAS
tCK @CL=3
tCK @CL=4
tCK @CL=5
tCK @CL=6
-25E
15
15
60
45
5
3.75
3
2.5
-3D
15
15
60
45
5
3.75
3
-37C
15
15
60
45
5
3.75
-5B
15
15
55
40
5
5
Tc = Case Temp, T
a
= Ambient Temp
Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
08/16/2012
1

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Description dram 256m (16mx16) 333mhz ddr2 1.8v dram 256m (16mx16) 333mhz ddr2 1.8v dram 256m (16mx16) 200mhz ddr2 1.8v dram 256m (16mx16) 267mhz ddr2 1.8v dram 256m (16mx16) 267mhz ddr2 1.8v dram 256m (16mx16) 400mhz ddr2 1.8v dram 256m (16mx16) 333mhz 1.8v ddr2 Sdram dram 256m (16mx16) 400mhz 1.8v ddr2 Sdram dram 256m (16mx16) 267mhz 1.8v ddr2 Sdram dram 256m (16mx16) 267mhz 1.8v ddr2 Sdram
Manufacture ISSI ISSI ISSI ISSI ISSI ISSI ISSI ISSI ISSI ISSI
Product Category DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM
RoHS Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes
Data Bus Width 16 bi 16 bi 16 bi 16 bi 16 bi 16 bi 16 bi 16 bi 16 bi 16 bi
Organizati 16 M x 16 16 M x 16 16 M x 16 16 M x 16 16 M x 16 16 M x 16 16 M x 16 16 M x 16 16 M x 16 16 M x 16
Package / Case BGA-84 BGA-84 BGA-84 BGA-84 BGA-84 BGA-84 BGA-84 BGA-84 BGA-84 BGA-84
Memory Size 256 Mbi 256 Mbi 256 Mbi 256 Mbi 256 Mbi 256 Mbi 256 Mbi 256 Mbi 256 Mbi 256 Mbi
Maximum Clock Frequency 333 MHz 333 MHz 200 MHz 266 MHz 266 MHz 400 MHz 333 MHz 400 MHz 266 MHz 266 MHz
Supply Voltage - Max 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V
Supply Voltage - Mi 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V
Maximum Operating Temperature + 85 C + 85 C + 85 C + 85 C + 85 C + 85 C + 85 C + 85 C + 85 C + 85 C
Packaging Reel Reel Reel Reel Reel Reel Tray Tray Tray Tray
Minimum Operating Temperature 0 C - 40 C - 40 C - 40 C 0 C 0 C - 40 C 0 C - 40 C 0 C
Mounting Style SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT
Factory Pack Quantity 2500 2500 2500 2500 2500 2500 209 209 209 209
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