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RS1006

Description
10 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size55KB,2 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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RS1006 Overview

10 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

MCC
Features
Low Leakage
Low Forward Voltage
Any Mounting Position
Silver Plated Copper Leads
RS1001
  omponents
21201 Itasca Street Chatsworth

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THRU
RS1007
10 Amp Single Phase
Bridge Rectifier
50 to 1000 Volts
RS-6
A
D
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
E
Microsemi
Catalog
Number
RS1001
RS1002
RS1003
RS1004
RS1005
RS1006
RS1007
Device
Marking
RS1001
RS1002
RS1003
RS1004
RS1005
RS1006
RS1007
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000v
B
C
-
A
+
G
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum Forward
Voltage Drop Per
Element
I
F(AV)
I
FSM
10 A
300A
T
J
= 65°C
8.3ms, half sine
K
F
H
J
L
V
F
1.1V
I
FM
= 5.0A;
T
J
= 25°C*
DIM
A
B
C
D
E
F
G
H
J
K
L
DIMENSIONS
INCHES
MIN
---
---
---
.15∅ x
---
---
1.00
---
---
---
---
MM
MIN
---
---
---
3.8∅ x
---
---
25.40
---
---
---
---
Maximum DC
Reverse Current At
I
R
10µA
T
J
= 25°C
Rated DC Blocking
100mA T
J
= 100°C
Voltage
*Pulse test: Pulse width 300
µsec,
Duty cycle 1%
MAX
.925
.763
.680
.23L
.300
.157
---
.050
.280
.075
.200
MAX
23.50
19.40
17.20
5.57L
7.50
4.00
---
1.30
7.00
1.90
5.10
NOTE
NOM
HOLE
NOM
NOM
TYP
NOM
3PL
www.mccsemi.com

RS1006 Related Products

RS1006 RS1007 RS1005 RS1004 RS1003 RS1002 RS1001
Description 10 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
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