10 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
| Parameter Name | Attribute value |
| Number of terminals | 4 |
| Number of components | 4 |
| Maximum average input current | 10 A |
| state | TRANSFERRED |
| packaging shape | Rectangle |
| Package Size | Flange mounting |
| Terminal form | Wire |
| terminal coating | tin lead |
| Terminal location | single |
| Packaging Materials | Plastic/Epoxy |
| structure | Bridge, 4 ELEMENTS |
| Diode component materials | silicon |
| Diode type | bridge rectifier diode |
| Phase | 1 |
| Maximum repetitive peak reverse voltage | 600 V |
| Maximum non-repetitive peak forward current | 300 A |

| RS1005 | RS1007 | RS1006 | RS1004 | RS1003 | RS1002 | RS1001 | |
|---|---|---|---|---|---|---|---|
| Description | 10 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE | 10 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE | 10 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE | 10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE | 10 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE | 10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE | 10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE |