AS7C316098A
Rev. 1.2
1024K X 16 BIT HIGH SPEED CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Rev. 1.2
Description
Initial Issued
Add 48 pin BGA package type.
1.“CE#
≧V
CC
- 0.2V” revised as ”CE#
≦0.2”
for TEST
CONDITION of Average Operating Power supply Current
Icc1 on page3
2.Revised
ORDERING INFORMATION
Page11
Issue Date
Jan.09. 2012
Mar.12. 2012
July.19. 2012
Alliance Memory, Inc.
0
AS7C316098A
Rev. 1.2
1024K X 16 BIT HIGH SPEED CMOS SRAM
GENERAL DESCRIPTION
The AS7C316098A is a 16M-bit high speed CMOS
static random access memory organized as 1024K
words by 16 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The AS7C316098A operates from a single
power supply of 3.3V and all inputs and outputs are
fully TTL compatible
FEATURES
• Fast access time : 10ns
•
low power consumption:
Operating current:
90mA (typical)
Standby current:
4mA(Typical)
• Single 3.3V power supply
• All inputs and outputs TTL compatible
• Fully static operation
• Tri-state output
• Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
• Data retention voltage : 1.5V (MIN.)
•
Green package available
• Package : 48-pin 12mm x 20mm TSOP-I
48-ball 6mmx8mm TFBGA
PRODUCT FAMILY
Product
Family
AS7C316098A(I)
Operating
Temperature
-40 ~ 85℃
Vcc Range
2.7 ~ 3.6V
Speed
10ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(Icc1,TYP.)
4mA
90mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
A0 - A19
CE#
WE#
OE#
LB#
UB#
V
CC
V
SS
DESCRIPTION
Address Inputs
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
DQ0 – DQ15 Data Inputs/Outputs
Alliance Memory, Inc.
1
AS7C316098A
Rev. 1.2
1024K X 16 BIT HIGH SPEED CMOS SRAM
PIN CONFIGURATION
AS7C316098A
A
B
C
LB# OE#
DQ8
UB#
A0
A3
A1
A4
A6
A7
A2
NC
CE# DQ0
DQ1 DQ2
DQ3
Vcc
Vss
DQ9 DQ10 A5
Vss
Vcc
DQ11 A17
DQ12 NC
AS7C316098A
D
E
F
G
H
A16 DQ4
DQ14 DQ13 A14
DQ15 A19
A18
A8
A12
A9
A15 DQ5 DQ6
A13 WE# DQ7
A10
A11
NC
1
2
3
4
TFBGA
5
6
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on Vcc relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 4.6
-0.5 to Vcc+0.5
0 to 70(C grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
Alliance Memory, Inc.
2
AS7C316098A
Rev. 1.2
1024K X 16 BIT HIGH SPEED CMOS SRAM
TRUTH TABLE
MODE
Standby
Output Disable
Read
CE#
H
L
L
L
L
L
L
L
L
OE#
X
H
X
L
L
L
X
X
X
WE# LB#
X
H
X
H
H
H
L
L
L
X
X
H
L
H
L
L
H
L
UB#
X
X
H
H
L
L
H
L
L
I/O OPERATION
DQ0-DQ7
DQ8-DQ15
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
D
OUT
D
OUT
High – Z
D
OUT
D
OUT
D
IN
High – Z
High – Z
D
IN
D
IN
D
IN
SUPPLY CURRENT
Isb , I
SB1,
I
CC
I
CC
Write
Note:
I
CC
H = V
IH
, L = V
IL
, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
SYMBOL
TEST CONDITION
V
CC
V
IH
*1
V
IL
*2
I
LI
V
CC
≧
V
IN
≧
V
SS
V
CC
≧
V
OUT
≧
V
SS
,
I
LO
Output Disabled
V
OH
V
OL
Icc
Icc1
Isb
I
SB1
I
OH
= -8mA
I
OL
=4mA
CE# = V
IL
, I
I/O
= 0mA
;f=max
-10
MIN.
2.7
2.2
- 0.3
-1
-1
2.4
-
-
TYP.
3.3
-
-
-
-
-
-
110
*4
MAX.
3.6
V
CC
+0.3
0.8
1
1
-
0.4
160
120
80
40
UNIT
V
V
V
µA
µA
V
V
mA
mA
mA
mA
AverageOperating
Power supply
Current
Standby Power
Supply Current
Standby Power
Supply Current
CE#
≦
0.2, Other
pin is at 0.2V or Vcc-0.2V -10
I
I/O
= 0mA;f=max
CE#
≧Vih
Other pin is at Vil or Vih
CE#
≧V
CC
- 0.2V;
Other pin is at 0.2V or Vcc-0.2V
-
-
-
90
-
4
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at V
CC
= V
CC
(TYP.) and T
A
= 25
℃
Alliance Memory, Inc.
3
AS7C316098A
Rev. 1.2
1024K X 16 BIT HIGH SPEED CMOS SRAM
CAPACITANCE
(T
A
= 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
8
10
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
speed
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
10/12ns
0.2V to Vcc-0.2V
3ns
Vcc/2
C
L
= 30pF + 1TTL,
I
OH
/I
OL
= -8mA/4mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
LB#, UB# Access Time
LB#, UB# to High-Z Output
LB#, UB# to Low-Z Output
AS7C316098A-10
SYM.
t
RC
t
AA
t
ACE
t
OE
t
CLZ
*
t
OLZ
*
t
CHZ
*
t
OHZ
*
t
OH
t
BA
t
BHZ
*
t
BLZ
*
MIN.
10
-
-
-
2
0
-
-
2
-
-
0
MAX.
-
10
10
4.5
-
-
4
4
-
4.5
4
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
LB#, UB# Valid to End of Write
SYM.
t
WC
t
AW
t
CW
t
AS
t
WP
t
WR
t
DW
t
DH
t
OW
*
t
WHZ
*
t
BW
AS7C316098A-10
MIN.
10
8
8
0
8
0
6
0
2
-
8
MAX.
-
-
-
-
-
-
-
-
-
4
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
*These parameters are guaranteed by device characterization, but not production tested.
Alliance Memory, Inc.
4
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