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CR2-040TIN/LEAD

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size362KB,3 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

CR2-040TIN/LEAD Overview

Rectifier Diode,

CR2-040TIN/LEAD Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid8308563424
Reach Compliance Codenot_compliant
ECCN codeEAR99
Date Of Intro2018-01-31
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current70 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage400 V
Maximum reverse current5 µA
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
CR2-010 THRU CR2-100
SILICON RECTIFIERS
2.0 AMP, 100 THRU 1000 VOLT
w w w. c e n t r a l s e m i . c o m
Cent
ral
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CR2-010 series
2.0 Amp silicon rectifier is a highly reliable component
designed for use in all types of military, commercial,
industrial, entertainment, computer, and automotive
applications. Because of its superior electrical
characteristics, this rectifier family is used as a universal
replacement for many other rectifiers.
MARKING: FULL PART NUMBER
DO-15 CASE
FEATURES:
2.0 Amp average forward current @ 50°C
50 Amp surge current
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL
-010
Peak Repetitive Reverse Voltage
VRRM
100
DC Blocking Voltage
VR
100
RMS Reverse Voltage
Average Forward Current (TA=50°C)
Peak Forward Surge Current (tp=8.3ms) IFSM
Operating and Storage
Junction Temperature
TJ, Tstg
VR(RMS)
IO
70
CR2
-040
-060
400
600
400
280
2.0
70
-65 to +150
MAX
5.0
300
1.1
40
UNITS
μA
μA
V
pF
600
420
-020
200
200
140
-080
800
800
560
-100
1000
1000
700
UNITS
V
V
V
A
A
°C
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
TYP
IR
VR=Rated VRRM
IR
VR=Rated VRRM, TA=100°C
VF
CJ
IF=2.0A
VR=4.0V, f=1.0MHz
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