MBM2147H-55Z datasheet, PDF - EEWORLD Datasheet

MBM2147H-55Z: DescriptionIC,SRAM,4KX1,MOS,DIP,18PIN,CERAMIC; Categorystorage storage; File Size318KB，5 Pages; ManufacturerFUJITSU; Websitehttp://edevice.fujitsu.com/fmd/en/index.html

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MBM2147H-55Z Overview

IC,SRAM,4KX1,MOS,DIP,18PIN,CERAMIC

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	1164792508
package instruction	DIP, DIP18,.3
Reach Compliance Code	unknown
ECCN code	EAR99
YTEOL	0
Maximum access time	55 ns
I/O type	SEPARATE
JESD-30 code	R-XDIP-T18
JESD-609 code	e0
memory density	4096 bit
Memory IC Type	STANDARD SRAM
memory width	1
Number of terminals	18
word count	4096 words
character code	4000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4KX1
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP18,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Minimum standby current	4.5 V
Maximum slew rate	0.18 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	MOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

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